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Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion

机译:稀氮化磷材料用作光电阴极,用于电化学太阳能转换

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Dilute nitride materials have been used in a variety of Ⅲ-Ⅴ photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P_(1-x)N_x as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P_(1-x)N_x is a promising materials system for use in nanoscale photocathode structures.
机译:稀氮化物材料已用于多种Ⅲ-Ⅴ类光子器件中,但在光电化学应用中尚未进行显着研究。这项工作的重点是使用形式为(Al,In)P_(1-x)N_x的稀氮化磷材料作为光阴极,以从太阳能中产生氢燃料。 GaP上AlPN薄膜的异质外延MOCVD生长可产生具有2.218 eV的直接带隙能的高质量材料。 InP和GaP纳米线在InP和Si衬底上的对准外延生长分别为在大面积上设计纳米结构的光电阴极提供了模板。与GaP电极相比,AlPN / GaP异质结构电极的电化学测试在蓝光照射下产生的光电流增强高达六倍。另外,在恒电流偏置后,AlPN / GaP电极的性能不会降低。这些结果表明,(Al,In)P_(1-x)N_x是用于纳米级光电阴极结构的有前途的材料系统。

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