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Pd Assisted HF Etching of Si: Electrochemical Measurement

机译:Si的Pd辅助HF蚀刻:电化学测量

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摘要

Metal-assisted HF etching of Si has attracted considerable attention as a new electroless method that can produce porous Si by immersing metal-modified Si in a HF solution without bias. Such etching generally uses not only metal-modified Si but also an oxidizing agent. Palladium exhibits high activity in assisted etching under dissolved-oxygen-free and dark conditions. In this study, we investigate the Pd assisted HF etching of n-Si by electrochemical measurements. The potential of Pd metal on Si is more negative than the potential of hydrogen evolution at open circuit conditions. Anodic current generation of Pd-modified Si electrodes at positive bias and the localization of etching under Pd films at low thickness indicate that Pd catalyzes the anodic dissolution of Si and the cathodic hydrogen evolution.
机译:Si的金属辅助HF蚀刻作为一种新的化学方法吸引了相当多的关注,该方法可以通过将金属改性的Si浸入HF溶液中而不会产生偏压来生产多孔Si。这种蚀刻通常不仅使用金属改性的Si,而且使用氧化剂。在无溶解氧和黑暗的条件下,钯在辅助蚀刻中表现出高活性。在这项研究中,我们通过电化学测量研究了钯辅助n-Si的HF蚀刻。在开路条件下,Si上Pd金属的电势比氢放出的电势更负。 Pd修饰的Si电极在正偏压下的阳极电流产生以及低厚度的Pd膜下的蚀刻局部化表明Pd催化Si的阳极溶解和阴极氢的释放。

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  • 会议地点 Las Vegas NV(US);Las Vegas NV(US)
  • 作者单位

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电工材料;
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