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Nanoantenna Couplers for Metal-Insulator-Metal WaveguideInterconnects

机译:用于金属-绝缘子-金属波导的纳米天线耦合器 r n

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State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antenna-waveguide structures for TE and TM incident plane waves ranging from X = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.
机译:最先进的铜互连线由于芯片缩小和RC延迟而降低了操作带宽,从而增加了空间功耗。宽带宽,最小化的欧姆损耗,较深的亚波长限制和高的集成密度是关键特征,这些特征使利用等离子波模式的金属-绝缘体-金属波导(MIM)吸引了片上光信号处理应用。两个基本组件(微米尺寸的光纤和几百纳米宽的波导)之间的尺寸不匹配,需要紧凑的耦合方法来实现大规模的片上光电器件集成。现有的解决方案使用波导锥度,这需要超过4λ长的锥度距离。我们证明,可以将纳米天线与MIM集成在一起,以增强耦合到MIM等离子体模式的能力。对TE和TM入射平面波范围从X = 1300至1600 nm的天线波导结构进行了二维有限差分时域仿真。每种情况下都使用相同的MIM(宽100 nm的Ag / 100nm的SiO2 / 100nm的Ag),而天线尺寸则系统地变化。用于从MIM断开的纳米天线;由于法布里-珀罗共振,磁场被严格限制在MIM天线间隙区域内。入射能量的大部分没有转移到等离子体模式。当纳米天线连接到MIM时,观察到更强的耦合,并且铁芯外端的电场强度提高了70倍以上。

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