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Fabrication of SiNW arrays by laser means and its applications in SERS detections

机译：SiNW阵列的激光制造及其在SERS检测中的应用

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摘要

Silicon nanowire (SiNW) arrays are fabricated by laser interference lithography (LIL) and metal assisted chemical etching. The LIL produces well-ordered surface nanostructures and the following metal assisted chemical etching configures the patterns into high-aspect-ratio three dimensional (3D) nanostructures. The SiNWs exhibit strong anti-reflection properties. The surface reflection decreases with the height of SiNWs. With Ag thin film coating, such black Si surfaces are applied as surface enhanced Raman scattering (SERS) substrates to measure the 4-methylbenzenethiol molecules adsorbed on the sample surface. The change of SERS signal intensity with the height of SiNWs is investigated. Higher SiNWs exhibit stronger SERS signals due to the large surface area. Meanwhile, Ag nanoparticles (NPs') decoration on SiNWs via either thermal annealing or redox reaction has been demonstrated for the SERS detection in comparison to Ag film coating. Ag NPs' decoration by redox reaction greatly improves the SERS signal intensity due to the generation of high density hotspots. However, the thermal annealing method weakens the SERS signals due to oxidation of Ag NPs.
机译：硅纳米线（SiNW）阵列是通过激光干涉光刻（LIL）和金属辅助化学蚀刻制成的。 LIL产生有序的表面纳米结构，随后的金属辅助化学蚀刻将图案配置为高纵横比的三维（3D）纳米结构。 SiNWs具有很强的抗反射性能。表面反射随着SiNW的高度而减小。使用Ag薄膜涂层，可将此类黑色Si表面用作表面增强拉曼散射（SERS）衬底，以测量吸附在样品表面上的4-甲基苯硫醇分子。研究了SERS信号强度随SiNWs高度的变化。较高的SiNW由于表面积较大，因此显示出较强的SERS信号。同时，与银膜涂层相比，已证明通过热退火或氧化还原反应在SiNW上进行银纳米颗粒（NPs）装饰可用于SERS检测。由于高密度热点的产生，通过氧化还原反应进行的银纳米颗粒的修饰大大提高了SERS信号强度。然而，由于Ag NP的氧化，热退火方法削弱了SERS信号。

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  • 来源
    《Plasmonics》|2014年|92780N.1-92780N.6|共6页
  • 会议地点 Beijing(CN)
  • 作者

    J. Yang; J. H. Teng; M. H. Hong;

  • 作者单位

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore,Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A~*STAR), 3 Research Link, 117602, Singapore,NUS Environmental Research Institute, National University of Singapore, 5A Engineering Drive 1, #02-01, 117411, Singapore;

    Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A~*STAR), 3 Research Link, 117602, Singapore;

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    silicon nanowires; black silicon; surface enhancement Raman scattering;

    机译：硅纳米线；黑硅表面增强拉曼散射;

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