In-Situ Assessment of Macropore Growth in Low-Doped n-Type Silicon

机译：低掺杂n型硅大孔生长的原位评估

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Understanding pore growth in semiconductors in detail needs some in-situ information about the processes occurring in a growing pore. It is shown that dual-mode in-situ FFT impedance spectroscopy can provide useful data for macropore etching in n-type Si under back side illumination. A new illumination mode is used alternating with the conventional current-voltage mode, and data evaluation is based on an advanced model developed for this kind of pore etching. The principles of the technique and the basics of the model are introduced and illustrated by a number of examples, some of which show new kinds of pore growth modes.

机译：详细了解半导体中的孔生长需要有关在生长的孔中发生的过程的一些原位信息。结果表明，双模原位FFT阻抗谱可以为背面照明下n型Si中的大孔蚀刻提供有用的数据。一种新的照明模式与传统的电流-电压模式交替使用，并且数据评估基于针对此类孔蚀刻开发的高级模型。介绍了该技术的原理和模型的基础，并通过许多示例进行了说明，其中一些示例显示了新型的孔隙生长模式。

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《Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann》|2008年|21-37|共17页
会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
作者
J. Carstensen; A. Cojocaru; M. Leisner; H. Foell;
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Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel, Germany;

Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel, Germany;

Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel, Germany;

Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel, Germany;

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专利

1. Fast macropore growth in n-type silicon [J] . Ala Cojocaru, Juergen Carstensen, Emmanuel K. Ossei-Wusu, Physica status solidi . 2009,第7期

机译：n型硅中大孔的快速生长
2. A self-consistent theoretical model for macropore growth in n-type silicon [J] . G. Barillaro, F. Pieri Journal of Applied Physics . 2005,第11期

机译：n型硅大孔生长的自洽理论模型
3. Crystal Orientation Dependence of Macropore Growth in n-Type Silicon [J] . S.R?nnebeck, J.Carstensen Electrochemical and solid-state letters . 1999,第3期

机译：n型硅中大孔生长的晶体取向依赖性
4. In-Situ Assessment of Macropore Growth in Low-Doped n-Type Silicon [C] . J. Carstensen, A. Cojocaru, M. Leisner, Meeting of the Electrochemical Society . 2008

机译：原位评估低掺杂N型硅的大孔生长
5. A study of contacts to p- and n-type silicon nanowires synthesized via vapor-liquid-solid growth process [D] . Dey, Soham 2007

机译：通过气液固生长过程合成的p型和n型硅纳米线的接触研究
6. Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process [O] . M. Garín, C. Jin, D. Cardador, -1

机译：在Silicon Millefeuille过程中控制硅大孔重组期间的Plateau-Rayleigh不稳定性
7. Formation of porous silicon: mechanism of macropores formation in n-type si [O] . Nurul Izni Rusli, Mastura Shafinaz Zainal Abidin, Budi Astuti, 2013

机译：多孔硅的形成：n型硅中大孔形成的机理

In-Situ Assessment of Macropore Growth in Low-Doped n-Type Silicon

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