首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Deep Trench Etching in Macroporous Silicon - Application to Photonic Crystal Gas Sensing
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Deep Trench Etching in Macroporous Silicon - Application to Photonic Crystal Gas Sensing

机译:大孔硅中的深沟槽蚀刻-在光子晶体气体传感中的应用

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摘要

We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. The limits of this new process are simulated using electrostatic models and are verified experimentally. This new techniques enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics, as an example an photonic crystal gas sensor is shown.
机译:我们提出了一种在n型硅的光电化学蚀刻过程中同时创建沟槽和有序大孔阵列的方法。这种新颖的方法允许以亚微米精度原位分离单个设备。使用静电模型模拟了这一新工艺的极限,并通过实验进行了验证。这项新技术可以在光子学,传感和电子学领域的大孔硅中实现新的器件结构,例如,以光子晶体气体传感器为例。

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