Formation of Porous Noble Metal Layer by Displacement Reactions with Porous Silicon

机译：与多孔硅的置换反应形成多孔贵金属层

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Porous Pd layer was synthesized on a Si wafer using anodized porous Si as a starting material. In the immersion plating, Pd replaced Si and porous Pd layer was formed. Pt was deposited on the porous Pd layer by galvanic displacement reaction. It was demonstrated that fabrication process of our micro fuel cell electrode was applicable.

机译：使用阳极氧化的多孔硅作为起始原料，在硅晶片上合成了多孔的Pd层。在浸镀中，用Pd代替Si，形成多孔的Pd层。通过电流置换反应将Pt沉积在多孔Pd层上。证明了我们的微型燃料电池电极的制造工艺是适用的。

著录项

来源
《Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann》|2008年|231-235|共5页
会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
作者
M. Hayase; T. Matsuzaka; J. G. A. Brito-Neto;
展开▼
作者单位

Department of Mechanical Engineering, Faculty of Science and Technology Tokyo University of Science, Noda, Chiba 227-8510, JAPAN;

Department of Mechanical Engineering, Faculty of Science and Technology Tokyo University of Science, Noda, Chiba 227-8510, JAPAN;

Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC Santo Andre, SP 09090-400, Brazil;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类表面处理;
关键词

相似文献

外文文献
中文文献
专利

1. Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer [J] . G. Garcia Salgado, R. Hernandez, J. Martinez, Microelectronics journal . 2008,第3a4期

机译：具有不同几何形状和厚度的多孔硅层的金属多孔硅光探测器的制作，表征和分析
2. Metal contact, resistivity and Hall measurement studies of a quasi monocrystalline porous silicon layer vis-a-vis porous silicon [J] . M Banerjee, S Basu, H Saha Semiconductor science and technology . 2008,第7期

机译：准单晶多孔硅层相对于多孔硅的金属接触，电阻率和霍尔测量研究
3. Current improvement of porous silicon photovoltaic devices by using double layer porous silicon structure: applicable in porous silicon solar cells [J] . M. Rajabi, R. S. Dariani Journal of porous materials . 2009,第5期

机译：利用双层多孔硅结构对多孔硅光伏器件的当前改进：适用于多孔硅太阳能电池
4. Formation of Porous Noble Metal Layer by Displacement Reactions with Porous Silicon [C] . M. Hayase, T. Matsuzaka, J. G. A. Brito-Neto Meeting of the Electrochemical Society . 2008

机译：通过与多孔硅的位移反应形成多孔贵金属层
5. A systematic investigation of reactions that form silicon -carbon bonds between organic molecules and porous silicon surfaces [D] . Stewart, Michael P. 2001

机译：系统地研究有机分子与多孔硅表面之间形成硅碳键的反应
6. Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching [O] . Yijie Li, Nguyen Van Toan, Zhuqing Wang, 2021

机译：用金属辅助化学蚀刻形成高掺杂多孔Si层的硅衬底的形成与评价
7. Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching [O] . Yijie Li, Nguyen Van Toan, Zhuqing Wang, 2021

机译：用金属辅助化学蚀刻形成高掺杂多孔Si层的硅衬底的形成与评价
8. Formation of Porous Surface Layers in Reaction Bonded Silicon Nitride During Processing [R] . Shaw, N. J., Glasgow, T. K. 1979

机译：反应键合氮化硅在加工过程中形成多孔表面层

Formation of Porous Noble Metal Layer by Displacement Reactions with Porous Silicon

摘要

著录项

相似文献

相关主题

期刊订阅