Macropore Formation in Prepatterned p-type Silicon

机译：预先形成图案的p型硅中的大孔形成

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The formation of ordered macropores in a prepatterned p-type silicon wafer by electrochemical anodization in HF:H_2O:DMSO (dimethyl sulfoxide) and HF:DMSO solutions was investigated. The pore wall thickness in the solutions was found to be reduced with increasing current density. The pore growth rate was compared using two kinds of etch pit; one is for 2 μm lattice spacing, the other is for 5 μm. The growth rate of the macropores for 2 μm size revealed a saturation behavior, while that of 5 μm corresponded to a linear increase in the same range of current density. The big difference in morphologies of macropores between HF:H_2O:DMSO and HF:DMSO solutions was accounted for based on the chemical nature of DMSO

机译：研究了在HF：H_2O：DMSO（二甲基亚砜）和HF：DMSO溶液中通过电化学阳极氧化在预图案化的p型硅晶片中形成有序大孔的过程。发现溶液中的孔壁厚度随着电流密度的增加而减小。使用两种刻蚀坑比较了孔的生长速率。一个用于2μm的晶格间距，另一个用于5μm。 2μm尺寸的大孔的生长速率显示出饱和行为，而5μm的生长速率对应于在相同电流密度范围内的线性增加。 HF：H_2O：DMSO和HF：DMSO溶液之间的大孔形态差异很大是基于DMSO的化学性质

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《Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann》|2008年|291-297|共7页
会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
作者
J. H. Kim; K. P. Kim; H. S. Seo; H. K. Lyu; S. H. Woo; J. H. Lee;
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Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

Department of Materials and Chemical Engineering, Hanyang University, Ansan, Kyounggi 426-791, Korea;

Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

Department of Materials and Chemical Engineering, Hanyang University, Ansan, Kyounggi 426-791, Korea;

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1. Macropore growth in a prepatterned p-type silicon wafer [J] . K. Kobayashi, F. A. Harraz, S. Izuo, Physica Status Solidi. A, Applications and Materials Science . 2007,第5期

机译：预先形成图案的p型硅晶片中的大孔生长
2. Experimental study of macropore formation in p-type silicon in a fluoride solution and the transition between macropore formation and electropolishing [J] . A. Slimani, A. Iratni, J.-N. Chazalviel, Electrochimica Acta . 2009,第11期

机译：氟化物溶液中p型硅大孔形成的实验研究以及大孔形成和电抛光之间的过渡
3. Formation of Macropore and Three-Dimensional Nanorod Array in p-Type Silicon [J] . Kang-Pil Kim, Shiqiang Li, Hong-Kun Lyu, Japanese journal of applied physics . 2010,第5issue1期

机译：p型硅中大孔和三维纳米棒阵列的形成
4. Macropore Formation in Prepatterned p-type Silicon [C] . J. H. Kim, K. P. Kim, H. S. Seo, Meeting of the Electrochemical Society . 2008

机译：预先定位P型硅中的大孔形成
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Macropore formation in p-type silicon: toward the modeling of morphology [O] . Amel Slimani, Aicha Iratni, Hervé Henry, 2014

机译：p型硅中的大孔形成：走向形态建模
7. Macropore formation in p-type silicon : toward the modeling of morphology [O] . Slimani Amel, Iratni Aicha, Henry Hervé, 2014

机译：p型硅中的大孔形成：朝向形态建模
8. Fabrication, Microstructural Characterization, and Internal Photoresponse ofPlatinum Silicide/P-Type Silicon and Iridium Silicide/P-Type Silicon Schottky Barrier Photodetectors for Infrared Focal Plane Arrays [R] . Mercer, D. E. 1991

机译：用于红外焦平面阵列的铂硅化物/ p型硅和铱硅化物/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应

Macropore Formation in Prepatterned p-type Silicon

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