首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Electrochemical Formation of Self-Positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate
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Electrochemical Formation of Self-Positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate

机译:自定位纳米孔在氧化多孔硅基体上的电化学形成

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摘要

This paper reports on recent improvements in the fabrication of self-positioned nano-sized pore array with a dimension of around 200 nm on the partly oxidized porous silicon (POPS) substrate. The fabrication process is based on photoelectrochemical etching, combined with steps of oxidation, CMP and KOH etching. Moreover, the dependency of a single pore diameter on the configuration of the partly oxidized micro-trenches with varied widths has been investigated. A simple model, based on the depletion effect, is proposed to explain the experimental phenomena.
机译:本文报道了在部分氧化的多孔硅(POPS)衬底上尺寸约200 nm的自定位纳米尺寸孔阵列的制造方面的最新进展。制造过程基于光电化学蚀刻,并结合了氧化,CMP和KOH蚀刻步骤。此外,已经研究了单个孔径对宽度变化的部分氧化微沟槽的构型的依赖性。提出了一种基于耗尽效应的简单模型来解释实验现象。

著录项

  • 来源
  • 会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
  • 作者单位

    State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;

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  • 正文语种 eng
  • 中图分类 表面处理;
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