首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH
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Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH

机译:在KOH中阳极氧化的n-InP中的优先<111> A孔传播机制

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摘要

This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.
机译:本文描述了在KOH水溶液中n-InP阳极氧化过程中孔的形成。孔优先沿111A晶体学方向传播并形成截短的四面体结构域。提出了一个模型,该模型解释了优先的111 A孔传播和均匀的孔直径。该模型概述了孔隙如何偏离<111> A方向及其特征直径。它还详述了载流子浓度变化对多孔结构尺寸的影响。

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