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首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Macropore Formation in p-type Silicon and Si/SiGe/Si/SiGe/p-type Silicon
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Macropore Formation in p-type Silicon and Si/SiGe/Si/SiGe/p-type Silicon

机译：p型硅和Si / SiGe / Si / SiGe / p型硅中的大孔形成

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摘要

Random and ordered macropore formation in p-type silicon substrate (10～20 Ω·cm) by electrochemical anodization in various HF-containing electrolytes was investigated under different operating conditions. The effect of electrolyte composition controlling the macropore formation both for random and periodically arranged pores is reported. The role played by etch pit for ordered macropore formation was investigated. The results revealed that the nature of constituents of solution plays very important roles in determining pore formation and morphology and the stable ordered macropore growth is not possible without etch pit. By using Si/SiGe/Si/SiGe/p-type silicon structure, ordered pillar structures were fabricated without etch pit formation process. The possible role of two sets of Si/SiGe layer for pillar formation is proposed.
机译：研究了在不同的操作条件下，在各种含HF的电解液中通过电化学阳极氧化在p型硅衬底（10〜20Ω·cm）中随机和有序形成大孔的现象。报道了电解质组合物控制随机和周期性排列的孔的大孔形成的作用。研究了腐蚀坑对有序大孔形成的作用。结果表明，溶液成分的性质在决定孔的形成和形态方面起着非常重要的作用，没有蚀刻坑就不可能稳定有序的大孔生长。通过使用Si / SiGe / Si / SiGe / p型硅结构，无需蚀刻坑形成工艺即可制造出有序的柱状结构。提出了两组Si / SiGe层在柱形成中的可能作用。

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  • 来源
  • 会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
  • 作者

    J. H. Kim; H. S. Seo; K. P. Kim; H. K. Lyu; S. H. Woo; J. H. Lee;

  • 作者单位

    Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

    Department of Materials and Chemical Engineering, Hanyang University, Ansan, Kyounggi 426-791, Korea;

    Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

    Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

    Division of Nano BioTechnology, Daegu Gyeongbuk Institute of Science Technology, Daegu, 704-230, Korea;

    Department of Materials and Chemical Engineering, Hanyang University, Ansan, Kyounggi 426-791, Korea;

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