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首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Model for Current Oscillations at the Si/Electrolyte Contact: Extension to Spatial Resolution
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Model for Current Oscillations at the Si/Electrolyte Contact: Extension to Spatial Resolution

机译：Si /电解质触点的电流振荡模型：空间分辨率的扩展

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摘要

A morphological model is given for the anodic oxidation of n-type silicon in fluoride containing solution in a potentiostatic arrangement. An earlier introduced macroscopic version of the model is extended from temporal to spatio-temporal resolution using a cellular automate. The prediction of the macroscopic model that lattice mismatch between silicon and its oxide leads to stress and stress leads to two types of oxides in the case of photocurrent oscillation is approved by the cellular automate model. The oxide types differ in stability against the etching process, Both oxide types are arranged in clusters which alternate at the electrode surface. Each cluster is in the size of 80-100 nm.
机译：给出了一种形态模型，用于以恒电位排列方式在含氟溶液中对n型硅进行阳极氧化。该模型的早期引入的宏观版本使用细胞自动将时间分辨率从时空扩展到了时空分辨率。细胞自动模型证实了对宏观模型的预测，即在光电流振荡的情况下，硅与其氧化物之间的晶格失配会导致应力，而应力会导致两种氧化物。氧化物类型对蚀刻工艺的稳定性不同。两种氧化物类型以簇的形式排列，在电极表面交替排列。每个簇的尺寸为80-100nm。

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