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首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization
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Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization

机译：磁场阳极氧化增强周期性硅纳米结构的可控性

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摘要

The presence of a magnetic field during anodization of Si in HF solution can drastically influence the resulting porous Si morphology. The effect of the strength of the magnetic field was investigated. The magnetic field enables the realization of non-percolating straight pores of diameters from 100 nm with n~+-type Si to several micrometers for p-type Si, through depths as large as 100 μm, without any lithographic or pore initiation process. There is a clear enhancement of the pore aspect ratio when increasing the magnetic field strength, which enhances the collection of holes at the pore tips with respect to lateral pore walls. Thick, well-defined free-standing membranes can also been fabricated for applications such as bio-scaffold and filters.
机译：在HF溶液中进行阳极氧化时，磁场的存在会严重影响最终的多孔硅形态。研究了磁场强度的影响。磁场能够实现直径从100 nm的n〜+型Si到p型Si的几微米的非渗透直孔，深度达到100μm，而无需任何光刻或孔引发过程。当增加磁场强度时，孔的纵横比会明显增加，这会增强孔相对于侧面孔壁在孔尖端处的聚集。还可以制造厚实，轮廓分明的独立式膜，用于生物支架和过滤器等应用。

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  • 来源
  • 会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
  • 作者

    B. Gelloz; M. Masunaga; T. Shirasawa; R. Mentek; T. Ohta; N. Koshida;

  • 作者单位

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

    Graduate School of Eng., Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan;

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