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Electric Field Effects on the Formation of Isolated Macro Porous Silicon

机译:电场对孤立大孔硅形成的影响

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In this paper, we discuss some of the challenges involved in the formation of isolated vertical pores, thereby describing the electric field effects on the pore formation. The diameters of the pore features under investigation range from 5μm to 20μm. A variety of experiments have been conducted, which include exploration of features with large pyramidal pits, large patterned features with an array of pyramidal pits, and patterned features using a metal mask or a dielectrically isolated etch mask. Macroporous silicon is explored under these parameters for p-type (100) and p-type (111) silicon substrates using electrochemical anodization. Electric field effects on the pore profile and formation will be discussed using the experimental anodization results and electric field and process modeling analysis related to the formation of isolated pores.
机译:在本文中,我们讨论了隔离垂直孔的形成所涉及的一些挑战,从而描述了电场对孔形成的影响。所研究的孔特征的直径范围为5μm至20μm。已经进行了各种实验,包括探索具有大金字塔形凹坑的特征,具有一系列金字塔形凹坑的大图案化特征以及使用金属掩模或介电隔离的蚀刻掩模的图案化特征。在这些参数下,使用电化学阳极氧化技术在p型(100)和p型(111)硅基板上探索了大孔硅。电场对孔的轮廓和形成的影响将通过实验阳极氧化结果以及与隔离孔的形成有关的电场和过程建模分析进行讨论。

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