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Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

机译：质子辐照的FZ-硅单晶中深辐射源供体的正电子寿命

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The recovery of shallow donor states of the atoms of phosphorus in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons was studied in the course of isochronal annealing. This process was investigated by the positron annihilation lifetime (PAL) spectroscopy and by low-temperature electrical measurements. The positron traps of a vacancy type manifesting themselves as deep donors have been revealed. These defects begin to anneal at ～593 K- 613 K; roughly estimated activation energy of the process is E_a ≈ 0.59 eV under the first order of reaction. The results suggest the involvement, at least, of one vacancy and the impurity atom of phosphorus in the microstructure of the deep donor.

机译：在等时退火过程中，研究了室温下用15 MeV质子辐照的n-FZ-Si：P材料中磷原子的浅施主态的回收率。通过正电子an灭寿命（PAL）光谱和低温电学测量研究了该过程。空位类型的正电子陷阱表现为深的供体。这些缺陷在〜593 K- 613 K处开始退火；在第一阶反应下，该过程的活化能大约为E_a≈0.59 eV。结果表明，至少一个空位和磷的杂质原子参与了深施主的微观结构。

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《Positron and positronium chemistry X》|2011年|224-227|共4页
会议地点 Smolenice Castle(SK)
作者
N. Yu. Arutyunov; M. Elsayed; R. Krause-Rehberg; V.V. Emtsev; G.A. Oganesyan; V.V. Kozlovski;
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作者单位

Department of Physics, Martin Luther University, 06120 Halle, Germany,Institute of Electronics, Tashkent 700170, Uzbekistan;

Department of Physics, Martin Luther University, 06120 Halle, Germany;

Department of Physics, Martin Luther University, 06120 Halle, Germany;

loffe Physico -Technical Institute, St. Petersburg 194021, Russia;

loffe Physico -Technical Institute, St. Petersburg 194021, Russia;

St. Petersburg State Polytechnic University, St. Petersburg 195251, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
vacancies; complexes; radiation defects; silicon; positron; annihilation radiation;

机译：空缺配合物;辐射缺陷；硅;正电子radiation灭辐射;

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1. Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals [J] . N. Yu. Arutyunov, M. Elsayed, R. Krause-Rehberg, Materials science forum . 2013,第期

机译：质子辐照的FZ-硅单晶中深辐射源供体的正电子寿命
2. Positron probing of point radiation defects in proton - Irradiated FZ-silicon single crystals [J] . Arutyunov N.Yu., Elsayed M., Krause-Rehberg R., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：质子辐照的FZ-硅单晶中点辐射缺陷的正电子探测
3. Irradiation damage from low-dose high-energy protons on mechanical properties and positron annihilation lifetimes of Fe-9Cr alloy [J] . Xu Q., Fukumoto K., Ishi Y., Journal of Nuclear Materials: Materials Aspects of Fission and Fusion . 2016,第Null期

机译：低剂量高能质子对Fe-9Cr合金力学性能和正电子an没寿命的伤害
4. Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals [C] . N. Yu. Arutyunov, M. Elsayed, R. Krause-Rehberg, International workshop on positron and positronium chemistry . 2013

机译：质子辐照的Fz硅单晶辐射起源深供散热器的正电子寿命
5. Sensitivity enhancement of poly(methyl methacrylate) by radiation-induced modification and degradation of PMMA by deep UV, x-ray,e-beam and proton beam irradiations. [D] . Choi, Jin-O. 1989

机译：通过深紫外线，X射线，电子束和质子束辐照辐射诱导的PMMA改性和降解来增强聚甲基丙烯酸甲酯的敏感性。
6. Ion Prostate Irradiation (IPI) – a pilot study to establish the safety and feasibility of primary hypofractionated irradiation of the prostate with protons and carbon ions in a raster scan technique [O] . Gregor Habl, Gencay Hatiboglu, Lutz Edler, 2014

机译：离子前列腺照射（IPI）–一项初步研究以光栅扫描技术确定质子和碳离子对前列腺的一次次分割照射的安全性和可行性
7. Ion beam induced charge (IBIC) irradiation damage study in synthetic single crystal diamond using 2.6 MeV protons [O] . Lohstroh, A, Sellin, PJ, Gkoumas, S, 2008

机译：使用2.6 MeV质子在合成单晶金刚石中离子束感应电荷（IBIC）辐照损伤研究
8. Effect of proton irradiation and annealing on the critical current density in YBa(sub 2)Cu(sub 3)O(sub 7-(delta)) single crystals [R] . Viswanathan, H. K., Kirk, P., Baldo, P., 1994

机译：质子辐照和退火对YBa（sub 2）Cu（sub 3）O（亚7-（δ））单晶中临界电流密度的影响

Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

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