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The influence of admixtures in n-alkanes on electron traps

机译：正构烷烃混合物对电子陷阱的影响

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The distribution of electron trap depths in hydrocarbons seems to be continuous in the range from 0.6 eV to 2.2 eV. However, it seems that among the deepest traps in n-heptane also the discrete ones appear as well. The influence of the admixture of other alkane on Ps intensity in alkanes was examined. As far as the admixture of an alkane with a shorter chain is concerned, the depth of the traps and their amount remain almost the same like in the case of the pure solvent. When it comes to essentially non-miscible solid heptane and nonane, a total lack of electron accumulation effects was observed. It is an exception among the mixed alkanes investigated here and needs a careful study.
机译：碳氢化合物中电子陷阱深度的分布似乎在0.6 eV至2.2 eV的范围内是连续的。但是，似乎在正庚烷中最深的阱中，也出现了离散阱。研究了其他烷烃混合物对烷烃中Ps强度的影响。就链烷烃与较短链的混合物而言，捕集阱的深度及其数量几乎与纯溶剂的情况一样。当涉及基本上不可混溶的固体庚烷和壬烷时，观察到完全缺乏电子积累效应。在这里研究的混合烷烃中，这是一个例外，需要仔细研究。

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