Advancements of Ultra-High Peak Power Laser Diode Arrays

机译：超高峰值功率激光二极管阵列的进展

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Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of lcm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over lMegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm~2 was achieved. Performance metrics of bar-based diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

机译：激光二极管外延的增强与工艺和封装的改进相结合，导致可获得在近红外波长（770nm至1100nm）具有超过500W峰值功率的lcm棒。冷却器设计的进步允许条对条间距低至350μm的多条堆叠以及可扩展的封装体系结构使单个二极管组件的总峰值功率超过1MegaWatt峰值功率。通过添加微光学元件，可以使整个阵列的亮度大于10kW / cm〜2。提出了专门设计用于在通常用于泵浦各种光纤和固态材料的波长和脉冲条件下实现高峰值功率和高亮度的基于棒的二极管激光器的性能指标。

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《High-power diode laser technology and applications XVI》|2018年|105140H.1-105140H.10|共10页
会议地点 San Francisco(US)
作者
D. Crawford; P. Thiagarajan; J. Goings; B. Caliva; S. Smith; R. Walker;
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Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, Arizona 85743, USA;

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专利

1. Diode-pumped lasers for ultra-high peak power [J] . M. SIEBOLD, rnJ. HEIN, rnM. HORNUNG, Applied physics . 2008,第3a4期

机译：二极管泵浦激光器可实现超高峰值功率
2. 1 kW peak power 808 nm 2-D laser diode array [J] . Rosen A., Stabile P. IEEE Photonics Technology Letters . 1989,第2期

机译：1 kW峰值功率808 nm二维激光二极管阵列
3. Laser diodes are power-packed: Single-mode laser diodes have a rosy future, both as individual sources of power up to 100 milliwatts and in arrays promising up to half a watt [J] . Botez D. IEEE Spectrum . 1985,第6期

机译：激光二极管具有功率包装：单模激光二极管的前景一片光明，既可以提供高达100毫瓦的单个电源，又可以提供高达半瓦的阵列电源
4. Advancements of Ultra-High Peak Power Laser Diode Arrays [C] . D. Crawford, P. Thiagarajan, J. Goings, SPIE Conference on High-Power Diode Laser Technology . 2018

机译：超高峰功率激光二极管阵列的进步
5. Thermal management, beam control, and packaging designs for high power diode laser arrays and pump cavity designs for diode laser array pumped rod shaped lasers. [D] . Chung, Te-Yuan. 2004

机译：高功率二极管激光器阵列的热管理，光束控制和封装设计，以及二极管激光器阵列抽运的棒状激光器的泵浦腔设计。
6. Single-shot measurement of 1010 pulse contrast for ultra-high peak-power lasers [O] . Yongzhi Wang, Jingui Ma, Jing Wang, -1

机译：单脉冲测量 1010脉冲对比度的超高峰值功率激光器
7. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments [O] . Farzin Amzajerdiana, Byron L. Meadowsa, Nathaniel R. Bakerb, 2015

机译：天基激光仪器高功率准连续激光二极管阵列的研究进展
8. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments [R] . Amzajerdian, Farzin, Meadows, Byron L., Baker, nathaniel R., 2004

机译：天基激光仪器高功率准连续激光二极管阵列的研究进展

Advancements of Ultra-High Peak Power Laser Diode Arrays

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