Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature

机译：高温闭锁下600V穿通IGBT的内部物理行为研究

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Latch-up phenomenon occurring in IGBT structure leads to the desruction of the device. All physical parameters change with temperature and as a consequence the operating mode is disturbed. The immunity to latch-up of the transistor reduces with increasing temperature. The amin resaon explaining this behaviour is the rising minority carrier current density through the device whih activates the parasitic thyristor. This paper proposes a physical analysis of the latch-up phenomenon which happens in an IGBT structure at high temperature.

机译：IGBT结构中发生的闩锁现象会导致器件变形。所有物理参数都会随温度而变化，因此会干扰运行模式。晶体管闩锁的抗扰性随温度升高而降低。解释这种行为的原因是通过激活寄生晶闸管的器件增加的少数载流子电流密度。本文提出了对IGBT结构在高温下发生的闩锁现象的物理分析。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.616-619|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
S.Azzopardi; J.-M.Vinassa; C.Zardini;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature [C] . S.Azzopardi, J.-M.Vinassa, C.Zardini European solid-state device research conference . 1997

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机译：功率循环和高温环境条件下600V-200A IGBT模块的降解行为

Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature

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