Performance limits of deep submicron buried channel delta doped MOSFETs

机译：深亚微米掩埋沟道增量掺杂MOSFET的性能极限

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Computer simulation is used to compare conventional MOSFETs with buried channel MOSFETs. It is found that there is always a trade off between device speed and the electrostatic integrity of the device. Conventional MOSFETs perform better than delta doped devices, but worse than buried chanel MOSFETs created using SiGe.

机译：使用计算机仿真来比较传统MOSFET与埋藏沟道MOSFET。发现在设备速度和设备的静电完整性之间始终存在折衷。常规MOSFET的性能优于掺杂三角形的器件，但比使用SiGe创建的掩埋式香奈儿MOSFET差。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.644-647|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
K.Diawuo; A.G.ONeill;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Performance limits of deep submicron buried channel delta doped MOSFETs [C] . K.Diawuo, A.G.ONeill European solid-state device research conference . 1997

机译：深度亚亚微米埋设通道Delta掺杂MOSFET的性能限制
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Performance limits of deep submicron buried channel delta doped MOSFETs

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