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首页> 外文会议>Proceedings of the 27th European solid-state device research conference >Three-DImensional Simulation of Contact Hole Metallization using Aluminum Sputter Deposition at Elevated Temperatures
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Three-DImensional Simulation of Contact Hole Metallization using Aluminum Sputter Deposition at Elevated Temperatures

机译：高温下铝溅射沉积接触孔金属化的三维模拟

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摘要

A three-dimensional(3D) simulation program has been developed which is capable of simulating layer deposition on 3D geometries. In this paper we present the application of the toll to the simulation of aluminum sputter deposition at elevated temperatures. It is assumed that due to the higher temprature, surface diffusion of the atoms is possible. In consequence, the step coverage is better than for cold sputter deposition. To model surface difusion, a transport coefficient K is introduced as parameter, which can be related to the diffusion length. Simulation results for different values of K are shown. It turned out that if K is far larger than the dimension of the contact hole, void free filling of the hole is achieved.
机译：已经开发了三维（3D）模拟程序，该程序能够模拟3D几何形状上的层沉积。在本文中，我们介绍了收费标准在模拟高温铝溅射沉积中的应用。假定由于较高的温度，原子的表面扩散是可能的。结果，台阶覆盖比冷溅射沉积更好。为了模拟表面扩散，引入了传输系数K作为参数，该参数可能与扩散长度有关。显示了不同K值的仿真结果。结果表明，如果K远大于接触孔的尺寸，则可以实现孔的无空隙填充。

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