A 34 GHz f_T Bipolar Process with High-Energy-Implanted Collertor

机译：具有高能量植入物收集器的34 GHz f_T双极工艺

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A substitution of buried layer and subseqent epitaxy in high performance double-poly Bipolar and 0.5#mu#m BiCMOS processes with a single low-cost High ENergy Collector Implant(HENCI) has been investigaed. A yield of 99

机译：已经研究了用单个低成本的高能量集电极植入物（HENCI）替代高性能双多晶硅双极和0.5＃μm的BiCMOS工艺中的掩埋层和随后的外延。产量为99

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.408-411|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
Y.V.Ponomarev; C.H.H.Emons; W.van der Wel; M.A.van den Berg; C.E.Timmering; A.c.L.Janssen; J.Politiek;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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机译：达到f_T = 710 GHz和f_（MAX）= 340 GHz的12.5 nm基本伪晶异质结双极晶体管
2. Performance enhancement of composition-graded-base type-Ⅱ InP/GaAsSb double-heterojunction bipolar transistors with f_T >500 GHz [J] . William Snodgrass, Bing-Ruey Wu, Walid Hafez, Applied Physics Letters . 2006,第22期

机译：f_T> 500 GHz的成分分级基Ⅱ型InP / GaAsSb双异质结双极晶体管的性能增强
3. F_T=25GHZ SILICON BIPOLAR TRANSISTOR [J] . HIROSHI KATO NEC技報 . 1999,第3期

机译：F_T = 25GHZ硅双极晶体管
4. A 34 GHz f_T Bipolar Process with High-Energy-Implanted Collertor [C] . Y.V.Ponomarev, C.H.H.Emons, W.van der Wel, European solid-state device research conference . 1997

机译：具有高能植入物收集器的34 GHz F_T双极工艺
5. 2GHz transmitter design based on 0.18 muM CMOS process and its linearization and 8 GHz transceiver design based on 0.25 muM silicon germanide bipolar process using GSML method. [D] . Lee, Jongsoo. 2008

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6. Integration of a versatile bridge concept in a 34 GHz pulsed/CW EPR spectrometer [O] . Alan Band, Matthew P. Donohue, Boris Epel, -1

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A 34 GHz f_T Bipolar Process with High-Energy-Implanted Collertor

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