Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements

机译：通过1 / f噪声测量确定ULSI n-MOSFET的界面状态密度

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1/f noise is a viable method to prolbe the quality of Si/SiO_2 interface in MOSFET's. In this work we address the impact of chanel quantization and mobility fluctuations on the 1/f results and we assess the precision of the method by comparing the results with those obtained from conventional C-V measurements.

机译：1 / f噪声是提高MOSFET中Si / SiO_2界面质量的可行方法。在这项工作中，我们解决了香奈儿量化和迁移率波动对1 / f结果的影响，并通过将结果与从常规C-V测量获得的结果进行比较来评估该方法的精度。

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《Proceedings of the 27th European solid-state device research conference》|1997年|p.332-335|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
S.Villa; G.De Geronimo; A.Pacelli; A.L.Lacaita; A.Longoni;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Application of l/f noise measurements to the characterization of near-interface oxide traps in ULSI n-MOSFETs [J] . S. Villa, G. De Geronimo, A. Pacelli Microelectronics & Reliability . 1998,第12期

机译：l / f噪声测量在ULSI n-MOSFETs的近界面氧化物陷阱表征中的应用
2. Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements [J] . Hyuck In Kwon, In Man Kang, Byung-Gook Park, Microelectronics & Reliability . 2004,第1期

机译：电应力对n-MOSFET中中间间隙界面陷阱陷阱密度和俘获截面的影响，其特征在于脉冲界面探测测量
3. Comments on 'Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurements' (and reply) [J] . Vuillaume D., Celik-Butler Z. IEEE Transactions on Electron Devices . 1990,第3期

机译：关于“通过1 / f噪声测量确定Si-SiO / sub 2 /界面陷阱密度”的评论（和回复）
4. Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements [C] . S.Villa, G.De Geronimo, A.Pacelli, European solid-state device research conference . 1997

机译：用1 / f噪声测量确定ULSI N-MOSFET的接口状态密度
5. Modeling and measurement of processes with liquid-vapor interface created by high power density lasers. [D] . Ki, Hyungson. 2001

机译：通过高功率密度激光器产生的液-气界面对过程进行建模和测量。
6. Structural Determination of Biomolecular Interfaces by Nuclear Magnetic Resonance of Proteins with Reduced Proton Density [O] . Fabien Ferrage, Kaushik Dutta, Alexander Shekhtman, -1

机译：生物分子接口的结构测定蛋白质的核磁共振与减少的质子密度
7. Characterization of interface trap density in power MOSFETs using noise measurements [O] . Huang Chender 1960- 1988

机译：使用噪声测量来表征功率MOSFET中的界面陷阱密度
8. Surface and Interface Depletion Corrections to Free Carrier Density Determinations by Hall Measurements. [R] . Chandra, A., Wood, C. E. C., Woodard, D., 1979

机译：通过霍尔测量确定自由载流子密度的表面和界面耗尽校正。

Determination of interface state density of ULSI n-MOSFET by 1/f noise measurements

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