Source/Drain Engineering with Ge Large Angle Tilt Implantation and Pre-Amorphization to Improve Current Drive and Alleviate Floating Body Effects of Thin Film SOI MOSFET's

机译：具有Ge大角度倾斜注入和预非晶化的源/漏工程，以改善电流驱动并减轻薄膜SOI MOSFET的浮体效应

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This work presents an advanced salicide technology for thin film silicon-On-Insulator(SOI) MOSFET's. Germanium large angle tilt implantation is applied to amorphize the silicon films prior to silicidation. This novel salicide technology greatly reduces the silicide formation energy and effectively controls the silicide depth. As a result, source/drain parasitic resistances are substantially reduced. In addition, due to the formation of a metal-semiconductor barrier near the source/channel junction, the floating body effects are alleviated.

机译：这项工作提出了一种用于绝缘体上薄膜（SOI）MOSFET的先进的自对准硅化物技术。在硅化之前，采用锗大角度倾斜注入来使硅膜非晶化。这种新颖的自对准硅化物技术大大降低了硅化物的形成能，并有效地控制了硅化物的深度。结果，源极/漏极寄生电阻大大降低。此外，由于在源极/沟道结附近形成了金属半导体势垒，浮体效应得以缓解。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.516-519|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
Tommy C.Hsiao; Ping Liu; William T.Lynch; Jason C.S.Woo;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, A. Mercha, Solid-State Electronics . 2005,第9期

机译：热载流子应力对部分耗尽SOI nMOSFET的薄栅氧化物的栅极感应浮体效应和漏极电流瞬变的影响
2. Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, K. Hayama, Microelectronics & Reliability . 2006,第9a11期

机译：在部分耗尽的SOI nMOSFET薄栅极氧化物浮体中热载流子引起的漏极电流滞后和瞬变的退化
3. Improved current drivability with back-gate bias for elevated source and drain structured ED-SOI SiGe MOSFET [J] . Hoon Choi, Kyoho Moon, Chulgu Lee, Microelectronic Engineering . 2009,第11期

机译：具有背栅偏置的改进的电流驱动性，用于增强的源极和漏极结构化ED-SOI SiGe MOSFET
4. Source/Drain Engineering with Ge Large Angle Tilt Implantation and Pre-Amorphization to Improve Current Drive and Alleviate Floating Body Effects of Thin Film SOI MOSFET's [C] . Tommy C.Hsiao, Ping Liu, William T.Lynch, European solid-state device research conference . 1997

机译：源/排水工程与GE大角度倾斜植入和预先复杂化，改善薄膜SOI MOSFET的电流驱动和缓解浮体效应
5. Floating body effects in fully depleted SOI MOSFETs. [D] . Ver Ploeg, Eric Paul. 1994

机译：完全耗尽的SOI MOSFET中的浮体效应。
6. Effects of starting powder and thermal treatment on the aerosol deposited BaTiO3 thin films toward less leakage currents [O] . Zhao Yao, Cong Wang, Yang Li, 2014

机译：初始粉末和热处理对气溶胶沉积BaTiO3薄膜朝向较小泄漏电流的影响
7. Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique [O] . RAMGOPAL RAO V, NAJEEB-UD-DIN HAKIM, DUNGA MV, 2002

机译：使用GIDL电流技术分析薄膜常规和单口袋SOI MOSFET中的浮体效应

Source/Drain Engineering with Ge Large Angle Tilt Implantation and Pre-Amorphization to Improve Current Drive and Alleviate Floating Body Effects of Thin Film SOI MOSFET's

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