Define high quality type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction

机译：定义具有高分辨率x射线衍射的高品质I型InGaAsSb / AlGaAsSb QW激光器制造工艺

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Active InGaAsSb/AlGaAsSb type-I quantum well (QW) compositions acceptable for pseudomorphic growth on GaSb substrates restrict the optical range to below 4 μm. Increasing the In concentration in active region and growing lattice-matched barrier/cladding layers will reach higher emission wavelength. We need to overcome several issues during fabrication process to ensure this high quality epitaxial layer. In this paper, high-resolution x-ray diffraction (HRXRD) method is used to define optimal epitaxy parameters for stable type-I GaSb-based mid infrared laser structures.

机译：可以在GaSb衬底上进行伪晶生长的有源InGaAsSb / AlGaAsSb I型量子阱（QW）组合物将光学范围限制在4μm以下。有源区中In浓度的增加和晶格匹配的势垒/覆层的生长将达到更高的发射波长。我们需要在制造过程中克服几个问题，以确保这种高质量的外延层。在本文中，高分辨率X射线衍射（HRXRD）方法用于定义稳定的基于I型GaSb的中红外激光结构的最佳外延参数。

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来源
《Proceedings of 4th IEEE International Conference on Applied System Invention》|2018年|1354-1357|共4页
会议地点 Chiba(JP)
作者
Hui-Wen Cheng; Chien-Hung Lin; Chien-Ping Lee;
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作者单位

Center for Nano Science and Technology, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan;

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan;

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Lattices; Substrates; Gallium; Gallium arsenide; Photonic band gap; Laser beams;

机译：晶格;基质;镓;砷化镓;光子带隙;激光束;;

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专利

1. 2.3-2.7-/spl mu/m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J] . Garbuzov D.Z., Lee H. IEEE Photonics Technology Letters . 1999,第7期

机译：InGaAsSb-AlGaAsSb宽波导SCH-QW二极管激光器的2.3-2.7- / splμ/ m室温CW操作
2. Direct measurements of heterobarrier leakage current and modal gain in 2.3 /spl mu/m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers [J] . Donetsky D.V., Belenky G.L. Electronics Letters . 1999,第4期

机译：直接测量2.3 / spl mu / m双QW p衬底InGaAsSb / AlGaAsSb广域激光器中的异势垒泄漏电流和模态增益
3. Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers [J] . Xu Gangyi, Li Aizhen Semiconductor science and technology . 2003,第9期

机译：InGaAsSb / AlGaAsSb I型长波长量子阱激光器的光学增益
4. Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution X-ray diffraction [C] . Hui-Wen Cheng, Chien-Hung Lin, Chien-Ping Lee International Conference on Applied System Innovation . 2018

机译：用高分辨率X射线衍射定义高质量类型Ingaassb / Algaassb QW激光制造工艺
5. Smarter Cancer Detection Through Neural Network Classification of High-Resolution X-ray Diffraction Tissue Scans [D] . Nacouzi, David J. 2019

机译：通过高分辨率X射线衍射组织扫描的神经网络分类实现更智能的癌症检测
6. PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE [O] . Hui-Wen Cheng, Shen-Chieh Lin, Zong-Lin Li, 2019

机译：MBE制备的I型InGaAsSb双量子阱激光结构的PCSEL性能
7. PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE [O] . Hui-Wen Cheng, Shen-Chieh Lin, Zong-Lin Li, 2019

机译：MBE准备的I IngaAsb双QWS激光结构的PCSEL性能
8. Fabrication of Laterally Coupled Distributed Feedback Laser Structures by Two Step RIE in InGaAsSb-AlGaAsSb Material System Grown by MBE [R] . Sin, Y., Bicknell-Tassius, R., Muller, R., 2000

机译：mBE生长的InGaassb-alGaassb材料系统中两步RIE制备横向耦合分布反馈激光器结构

Define high quality type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction

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