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In situ TEM-Tandem/Implanter Interface Facility in Wuhan University for Investigation of Radiation Effects

机译:武汉大学原位TEM-串联/植入器界面辐射效应研究

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摘要

A Hitachi H800 transmission electron microscope (TEM) was linked to a 200kV ion implanter and a 2×1.7MV tandem accelerator through the interface system designed on the basis of ion beam transportation calculations. The facility provides combined or separated use of the implanter, the accelerator and the microscope. 400 to 3400kV ions (except noble gas ions) implantation and 15 to 200kV gas ions implantion are available. With this facility, evolution of microstructures during ion irradiation for the evaluation of irradiation-resistance performance of nuclear materials can be observed. In the test experiments, ion beams of N<'+>, He <'+>, Ar<'+>, and H<'+> were successfully transported from the implanter into the TEM chamber through the interface system, and the ion currents measured at the entrance of the TEM column were between 20~80nA. The amorphisation process of Si crystal irradiated by N<'+> ion beams was successfully observed in the preliminary experiments, demonstrating that this interface facility is capable of in situ study of ion irradiated samples.
机译:通过基于离子束传输计算设计的接口系统,将Hitachi H800透射电子显微镜(TEM)连接到200kV离子注入机和2×1.7MV串联加速器。该设施可联合或分开使用植入机,加速器和显微镜。可以注入400至3400kV离子(稀有气体离子除外)和15至200kV气体离子。使用这种设备,可以观察到离子辐照过程中微结构的演变,以评估核材料的抗辐照性能。在测试实验中,通过界面系统将N'+,He <'>,Ar <+>和H <+>的离子束成功地从注入机传输到TEM室中, TEM柱入口测得的电流在20〜80nA之间。在初步实验中成功观察到了N +离子束辐照的Si晶体的非晶化过程,这表明该界面设备能够对离子辐照样品进行原位研究。

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