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首页> 外文会议>Proceedings of International Kunming Symposium on Microscopy July 2-5, 2000 Kunming, Yunnan Province, China >The study of enhanced formation of low-resistivity C54-TiSi_2 by high-resolution transmission electron microscopy
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The study of enhanced formation of low-resistivity C54-TiSi_2 by high-resolution transmission electron microscopy

机译：高分辨率透射电镜研究增强低电阻率C54-TiSi_2的形成

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摘要

Low-resistivity C54-TiSi_2 is currently the most widely used silicide for the self-aligned technology of ultralarge scale integrated circuits. However, as the device dimensions scale down to deep submicron region, it has been found that the high-resistivity C49- to C54-TiSi_2 conversion becomes increasingly difficult, the fact attributed to the low density of nucleation sites for the C54-TiSi_2 phase. The desire to form C54-TiSi_2 completely in a submicron structure has led to extensive research in increasing the C54-TiSi_2 nucleation density. One promising method was found to be high temperature sputtering (HTS).
机译：对于超大规模集成电路的自对准技术，低电阻率C54-TiSi_2是目前使用最广泛的硅化物。然而，随着器件尺寸缩小到深亚微米区域，已发现将高电阻率C49-转变为C54-TiSi_2变得越来越困难，这一事实归因于C54-TiSi_2相的成核位置密度低。在亚微米结构中完全形成C54-TiSi_2的愿望导致了对提高C54-TiSi_2成核密度的广泛研究。发现一种有前途的方法是高温溅射（HTS）。

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