Influence of Intraband Relaxation on Quantum Dot Lasers

机译：带内弛豫对量子点激光器的影响

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The intraband relaxation in quantum dot (QD) systems is impeded by the phonon bottleneck effect and the typical relaxation time (1-100ps) is much longer than that (0.1-1ps) in the quantum wells. Many factors, in addition to the temperature, may affect the relaxation rate, such as the availability of Auger-like relaxation channel. The bottleneck has only trivial influence if only the spontaneous recombination exists, since this process is much slower than the intraband relaxation. But in the case of stimulated emission, the influence may be significant.

机译：声子瓶颈效应阻碍了量子点（QD）系统中的带内弛豫，典型的弛豫时间（1-100ps）比量子阱中的弛豫时间（0.1-1ps）长得多。除温度外，许多因素都可能影响弛豫速率，例如像俄歇一样的弛豫通道的可用性。如果仅存在自发重组，则瓶颈的影响很小，因为该过程比带内弛豫要慢得多。但是在受激发射的情况下，影响可能很大。

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来源
《Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices》|2005年|P.55-58|共4页
会议地点 Beijing(CN)
作者
Sheng-ling Deng; Yong-Zhen Huang; Li- Juan Yu;
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作者单位

State Key laboratory on Integrated Optoelectronics, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
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1. Intraband relaxation and its influences on quantum dot lasers [J] . Deng SL, Huang YZ, Yu LJ Chinese physics letters . 2005,第8期

机译：带内弛豫及其对量子点激光器的影响
2. Intraband relaxation and its influences on quantum dot lasers [J] . Deng SL, Huang YZ, Yu LJ Chinese physics letters . 2005,第8期

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3. Intraband Relaxation and Its Influences on Quantum Dot Lasers [J] . DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan 中国物理快报：英文版 . 2005,第008期

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4. Influence of Intraband Relaxation on Quantum Dot Lasers [C] . Sheng-ling Deng, Yong-Zhen Huang, Li- Juan Yu, School on Semiconductor Nanostructures and Optoelectronic Devices . 2005

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5. Short-wavelength indium aluminum gallium phosphide quantum well lasers and indium phosphide quantum dot coupled to strained indium aluminum gallium phosphide quantum well lasers grown by MOCVD [D] . Heller, Richard Dean, Jr. 2003

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6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

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7. Intraband carrier photoexcitation in quantum dot lasers [O] . Moreno, P, Richard, M, Rossetti, M, 2008

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8. Far-Infrared Spontaneous Intraband Emission from Laser Structures with Quantum Dots and Quantum Wells. [R] . Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., 1998

机译：具有量子点和量子阱的激光器结构的远红外自发带内发射。

Influence of Intraband Relaxation on Quantum Dot Lasers

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