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首页> 外文会议>Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices >Atomic Arrangement at Au/p-GaN Interface in Low Resistance Contacts
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Atomic Arrangement at Au/p-GaN Interface in Low Resistance Contacts

机译：低电阻触点中Au / p-GaN界面的原子排列

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The atomic arrangement of Ni-Au contacts on p-type GaN has been studied by transmission electron microscopy. A sharp transition between GaN and Au is observed, with no intermediate phases present. Lattice parameter measurements of the Au layer reveal that the Au layer is fully relaxed. The epitaxial relationship between the Au layer and the GaN film is (111)Au//(0002)GaN, [1-10]Au//[11-20]GaN. Calculated images show that Au is directly in contact with Ga on p-GaN. Ni, which is used primarily as a wetting later, is not present at the interface. The separation between Ga and Au atoms at the interface was found to be 2.5A. Careful image simulations give a best match for the interface separation obtained by TEM that corresponds to covalent Ga bonded to metallic Au, with a bond length of 2.5 A.
机译：通过透射电子显微镜研究了p型GaN上Ni-Au触点的原子排列。观察到GaN和Au之间的急剧过渡，没有中间相。 Au层的晶格参数测量表明Au层完全松弛。 Au层与GaN膜之间的外延关系为（111）Au //（0002）GaN，[1-10] Au // [11-20] GaN。计算图像显示，Au与p-GaN上的Ga直接接触。界面上不存在主要用作以后润湿的镍。发现在界面处的Ga原子与Au原子之间的间隔为2.5A。仔细的图像模拟可以很好地匹配TEM获得的界面分离，该界面分离对应于键合长度为2.5 A的与金属Au结合的共价Ga。

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