Residual stress evaluation of GaN epitaxial layers transferred onto Si (100) substrate

机译：GaN外延层转移到Si（100）衬底上的残余应力评估

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GaN based power devices have been fabricated on SiC, sapphire, and Si substrates.1 The output power densities of the devices are limited by the thermal conductivities of the substrate materials. If it is possible to transfer the GaN epitaxial layer onto diamond substrate with the highest thermal conductivity among materials, which would largely increase the output power density of the devices. In this work, we explored the transfer process of GaN epitaxial layer and investigated the residual stress of the GaN transferred onto Si (100) substrate.

机译：基于GaN的功率器件已在SiC，蓝宝石和Si衬底上制造。1器件的输出功率密度受衬底材料的热导率限制。如果有可能将GaN外延层转移到材料中导热率最高的金刚石基板上，这将大大提高器件的输出功率密度。在这项工作中，我们探索了GaN外延层的转移过程，并研究了转移到Si（100）衬底上的GaN的残余应力。

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《2018年第65回応用物理学会春季学術講演会講演予稿集》|2018年|13.191|共1页
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Jianbo Liang; Yan Zhou; Manikant Singh; Filip Gucmann; James Pomeroy; Martin Kuball; Naoteru Shigekawa;
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Osaka City Univ. liang@elec.eng.osaka-cu.ac.jp;

Univ. of Bristol;

Univ. of Bristol;

Univ. of Bristol;

Univ. of Bristol;

Univ. of Bristol;

Osaka City Univ.;

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专利

1. Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates [J] . Barghout K, Chaudhuri J Journal of Materials Science . 2004,第18期

机译：计算在重要技术衬底上生长的GaN外延层中的残余热应力
2. Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates [J] . K. Barghout, J. Chaudhuri Journal of Materials Science . 2004,第18期

机译：计算在具有重要技术意义的衬底上生长的GaN外延层中的残余热应力
3. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN [J] . Bessolov V. N., Grashchenko A. S., Konenkova E. V., Physics of the solid state . 2015,第10期

机译：具有SiC缓冲层的n和p型Si（100）衬底对半极性AlN和GaN外延层的生长机理和结构的影响
4. Residual stress evaluation of GaN epitaxial layers transferred onto Si (100) substrate [C] . Jianbo Liang, Yan Zhou, Manikant Singh, 応用物理学会春季学術講演会 . 2018

机译：将GaN外延层转移到Si（100）衬底上的残余应力评估
5. An experimental technique to evaluate free-edge residual stresses in layered material systems. [D] . Bowman, Keith Bryan. 2001

机译：一种评估层状材料系统中自由边缘残余应力的实验技术。
6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
7. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates [O] . Kaneki, Shota, Ohira, Joji, Toiya, Shota, 2016

机译：使用在独立式GaN衬底上生长的外延n-GaN层实现高稳定性和低态密度Al2O3 / GaN界面
8. High Quality AIN And GaN Epilayers Grown On (00-1) Sapphire, (100), and (111)Silicon Substrates [R] . Kung, P., Saxler, A., Zhang, X., 1995

机译：在（00-1）蓝宝石，（100）和（111）硅衬底上生长的高质量aIN和GaN外延层

Residual stress evaluation of GaN epitaxial layers transferred onto Si (100) substrate

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