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首页> 外文会议>Proceedings of the third IASTED African conference on power and energy systems: Science and technology applications for health and sustainable development >FABRICATION AND CHARACTERIZATION OF SPRAY PYROLYSED InXSY THIN FILMS FOR CuInS_2 SOLAR CELLS
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FABRICATION AND CHARACTERIZATION OF SPRAY PYROLYSED InXSY THIN FILMS FOR CuInS_2 SOLAR CELLS

机译：CuInS_2太阳能电池喷涂热解性Inxsy薄膜的制备与表征

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摘要

Indium sulphide thin films were prepared at differentrnsubstrate temperatures and indium to sulphur ratio [In/S]rnusing spray pyrolysis from indium (ⅲ) chloride andrnthiourea precursor solution. The films were characterisedrnusing X–ray diffraction (XRD), optical absorption andrnelectrical measurements. All the films showed preferredrnorientation along the (220) direction. There was energyrngap modification when the indium to sulphur ratio [In/S]rnwas adjusted from 2/3 (2.4 eV) with shift towards higherrnenergy for higher values. The energy gap increased withrnsubstrate temperature for films prepared within therntemperature range of 483K to 705K. Electrical resistivityrnmeasured at 300 K decreased with increasing substraterntemperature from 1.16x102 Ω cm at 483 K to 1.62 ×100 Ωrncm at 705 K. In2S3 prepared at intermediate temperaturernshowed high potential for use as buffer layers inrnphotovoltaic heterojunction devices.
机译：使用氯化铟和硫脲前体溶液进行喷雾热解，在不同的底物温度和铟硫比[In / S]下制备硫化铟薄膜。使用X射线衍射（XRD），光吸收和电学测量来表征薄膜。所有薄膜都显示出沿（220）方向的最佳取向。当将铟与硫之比[In / S] rn从2/3（2.4 eV）调整为更高的值时，能量跃迁发生了变化。在483K至705K的温度范围内制备的薄膜，能隙随基底温度的增加而增加。随着衬底温度的升高，在300 K下测得的电阻率从483 K下的1.16x102Ωcm降低到705 K下的1.62×100Ωrncm。在中等温度下制备的In2S3具有很高的潜力，可用作光伏异质结器件的缓冲层。

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