STRAINED GERMANIUM MOSFETs: DEVICES AND PROCESS TECHNOLOGY

机译：应变锗MOSFET：器件和工艺技术

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Germanium p-MOSFETs with a thin high-k dielectric (EOT～1.6 nm) were fabricated on bulk Ge and epitaxial strained germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The strained germanium p-MOSFETs showed 2X enhancement in hole mobility compared to silicon control devices, a 35% increase in mobility compared to similarly processed bulk germanium p-MOSFETs, and enhanced transconductance relative to bulk Ge p-MOSFETs.

机译：在块状锗和外延应变硅基锗衬底上制备了具有薄的高k电介质（EOT〜1.6 nm）的锗p-MOSFET。这些器件表现出低于90 mV /十年的亚阈值摆幅和低栅极漏电流。与硅控制器件相比，应变锗p-MOSFET的空穴迁移率提高了2倍，与类似处理的体锗p-MOSFET相比，迁移率提高了35％，并且相对于体Ge p-MOSFET增强了跨导。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.406-411|共6页
会议地点 San AntonioTX(US)
作者
A. Ritenour; M.L. Lee; N. Lu; W. Bai; S. Yu; E.A. Fitzgerald; D.L. Kwong; D.A. Antoniadis;
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Microsystems Technology Laboratory, MIT, Cambridge, MA;

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正文语种 eng
中图分类半导体技术;
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1. Strained-silicon MOSFET process technology-control of impurity and germanium atoms at the hetero-interface [J] . Sugii N, Kimura Y, Kimura S, Materials science in semiconductor processing . 2005,第1a3期

机译：应变硅MOSFET工艺技术-异质界面中杂质和锗原子的控制
2. Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics [J] . Shin-ichi Takagi, Tomohisa Mizuno, Zaoharu Sugiyama IEICE Transactions on Electronics . 2001,第8期

机译：绝缘体上应变硅（Strained-SOI）MOSFET-概念，结构和器件特性
3. Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs [J] . Shin-ichi Takagi, Tomohisa Mizuno, Naoharu Sugiyama, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2000,第668期

机译：绝缘体上应变（MOSFET）MOSFET的器件结构和电特性
4. STRAINED GERMANIUM MOSFETs: DEVICES AND PROCESS TECHNOLOGY [C] . A. Ritenour, M. L. Lee, N. Lu, International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices . 2004

机译：紧张的锗MOSFET：设备和工艺技术
5. Silicon-germanium/silicon vertical MOSFETs and sidewall strained silicon devices: Design and fabrication. [D] . Liu, Kou-Chen. 1999

机译：硅锗/硅垂直MOSFET和侧壁应变硅器件：设计和制造。
6. Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress [O] . Yan Liu, Jiebin Niu, Hongjuan Wang, 2017

机译：通过外部单轴应力提高迁移率的SOI上的应变锗量子阱PMOSFET
7. Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology [O] . Ní Chléirigh Cáit 2007

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STRAINED GERMANIUM MOSFETs: DEVICES AND PROCESS TECHNOLOGY

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