HAFNIUM TITANATE AS A HIGH-K GATE INSULATOR

机译：钛酸作为高K门绝缘子

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Hf_xTi_(1-x)O_2 films have been deposited by chemical vapor deposition. The permittivity of the film depends on the composition, but films with a permittivity of approximately 50 have been obtained. The films do not appear to undergo phase separation up to at least 1000 ℃. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities appear to be roughly comparable to those obtained when using pure HfO_2, however the films in this report had thick interfacial layers, which may affect the transistor properties.

机译：Hf_xTi_（1-x）O_2膜已通过化学气相沉积法沉积。膜的介电常数取决于组成，但是已经获得具有约50的介电常数的膜。薄膜在至少1000℃以下似乎不会发生相分离。界面性质和电荷俘获似乎取决于组成。对于具有近似相等的Hf和Ti浓度的薄膜，晶体管特性和反型迁移率似乎与使用纯HfO_2时所获得的那些大致可比，但是该报告中的薄膜具有较厚的界面层，这可能会影响晶体管的性能。

著录项

来源
《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.278-285|共8页
会议地点 San AntonioTX(US)
作者
F. Chen; M. Li; V. Afanasev; W. L. Gladfelter; S. A. Campbell;
展开▼
作者单位

Department of Electrical and Computer Engineering, University of Minnesota;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. Hafnium titanate as a high permittivity gate insulator: Electrical and physical characteristics and thermodynamic stability [J] . Min Li, Zhihong Zhang, Stephen A. Campbell, Journal of Applied Physics . 2007,第4期

机译：钛酸作为高介电常数栅绝缘体：电气和物理特性以及热力学稳定性
2. Electrical characteristics of metal-insulator-semiconductor and metal-insulator-semiconductor-insulator-metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models [J] . Hlali Slah, Hizem Neila, Kalboussi Adel Bulletin of Materials Science . 2017,第1期

机译：不同高k栅极电介质下的金属绝缘体 - 半导体和金属绝缘体 - 半导体 - 绝缘体 - 金属电容器的电气特性在半古典和量子机械模型中研究
3. Lead-zirconate-titanate based metal/ferroelectric/high-K/semiconductor (M/Fe/High-K/S) gate stack for non-volatile memory applications [J] . Singh Prashant, Bhatt Aditya Nath, Bansal Akansha, Ferroelectrics . 2016,第Null期

机译：钛酸铅锆酸盐金属/铁电/高K /半导体（M / Fe / High-K / S）栅堆叠，用于非易失性存储应用
4. HAFNIUM TITANATE AS A HIGH-K GATE INSULATOR [C] . F. Chen, M. Li, V. Afanasev, International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices . 2004

机译：铪钛酸盐作为高k门绝缘体
5. Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators. [D] . Li, Min. 2005

机译：钛酸ha超薄材料作为高介电常数栅绝缘子的开发与表征。
6. Silicon Nanowires with High-k Hafnium Oxide Dielectrics for Sensitive Detection of Small Nucleic Acid Oligomers [O] . Brian R. Dorvel, Bobby Reddy Jr, Jonghyun Go, -1

机译：具有高k铪氧化物电介质的硅纳米线用于敏感检测小核酸低聚物
7. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric [O] . Lin Liang, Wei Li, Sichao Li, 2018

机译：具有高k铪硅酸盐栅极电介质的SiC MOS的界面特性研究

HAFNIUM TITANATE AS A HIGH-K GATE INSULATOR

摘要

著录项

相似文献

相关主题

期刊订阅