SOLID PHASE EPITAXY - ACTIVATION AND DEACTIVATION OF BORON IN ULTRA-SHALLOW JUNCTIONS

机译：固相表位活化-超浅结中硼的活化和失活

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The solid phase epitaxial growth technique appears to be a promising method for achieving junction depths and sheet resistance values low enough to meet the performance specifications of the 65 and 45 nm node for boron, BF_2 and BF_3 doping profiles in amorphous silicon. Room temperature implants of these three dopant species into (100) Si pre-amorphised by ~(74)Ge~+ (30keV, 1.0·10~(15) cm~(-2)) lead to boron concentration profiles that fulfil the technological requirements. It was found that even for ultra shallow junctions the time for the regrowth process at 650℃ has to be optimised with regard to the implanted species in the range between 5 and 60 s, especially when fluorine is present. The thermal stability of the boron profile distribution that meet 65 nm-node requirements was evaluated by subsequent thermal anneals simulating the thermal effects expected for typical silicidation processes. For a more detailed investigation the post-annealing temperatures ranged from 250℃ to 1050℃ with times from a few to several hundred seconds. All the junctions were analysed by four-point probe, and selected samples by SIMS, TEM and HREM.

机译：固相外延生长技术似乎是一种有前途的方法，可实现足够低的结深度和薄层电阻值以满足非晶硅中硼，BF_2和BF_3掺杂轮廓的65和45 nm节点的性能规格。在〜（74）Ge〜+（30keV，1.0·10〜（15）cm〜（-2））预非晶化的（100）Si中将这三种掺杂剂进行室温注入会产生符合技术要求的硼浓度曲线要求。发现即使对于超浅结，也必须针对5到60 s之间的注入物种优化650℃的再生过程时间，尤其是在存在氟的情况下。通过随后的热退火来模拟满足典型硅化工艺预期的热效应，从而评估了满足65 nm节点要求的硼分布分布的热稳定性。为了进行更详细的研究，退火后的温度范围从250℃到1050℃，时间从几秒到几百秒。所有连接点均通过四点探针进行分析，并通过SIMS，TEM和HREM选择样品。

著录项

来源
《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.90-105|共16页
会议地点 San AntonioTX(US)
作者
W. Lerch; S. Paul; J. Niess; F. Cristiano; Y. Lamrani; P. Calvo; N. Cherkashin; D.F. Downey; E.A. Arevalo; D.F. Downey; E.A. Arevalo;
展开▼
作者单位

Mattson Thermal Products GmbH, Daimlerstrasse 10, D-89160 Dornstadt;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. High activation of Sb during solid-phase epitaxy and deactivation during subsequent thermal process [J] . Suzuki K., Tashiro H. IEEE Transactions on Electron Devices . 2003,第8期

机译：固相外延过程中Sb的高活化和后续热处理中的失活
2. Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions [J] . F. Cristiano, N. Cherkashin, R Calvo, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2004,第Dec期

机译：预非晶化超浅结中硼电活化的热稳定性
3. Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry [J] . Chan T. K., Fang F., Markwitz A., Applied Physics Letters . 2012,第8期

机译：高分辨率卢瑟福背散射光谱法观察超浅锡注入硅的固相外延
4. SOLID PHASE EPITAXY - ACTIVATION AND DEACTIVATION OF BORON IN ULTRA-SHALLOW JUNCTIONS [C] . W. Lerch, S. Paul, J. Niess, International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices . 2004

机译：超浅结中硼的固相外延 - 活化与失活
5. Implantation and activation of ultra-shallow boron in germanium. [D] . Yates, Bradley R. 2012

机译：超浅硼在锗中的注入和活化。
6. Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy [O] . Evgeniy Chusovitin, Sergey Dotsenko, Svetlana Chusovitina, 2018

机译：固相外延在Si（001）上形成连续GaSb薄膜
7. Homogeneous Si films on $CaF_{2}/Si(111)$ due to boron enhanced solid phase epitaxy [O] . Wollschläger, J., Deiter, C., Bierkandt, M., 2006

机译：由于硼增强的固相外延，在$ CaF_ {2} / Si（111）$上的均匀Si膜

SOLID PHASE EPITAXY - ACTIVATION AND DEACTIVATION OF BORON IN ULTRA-SHALLOW JUNCTIONS

摘要

著录项

相似文献

相关主题

期刊订阅