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首页> 外文会议>Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) >FUNDAMENTAL ISSUES IN MILLISECOND ANNEALING
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FUNDAMENTAL ISSUES IN MILLISECOND ANNEALING

机译：微妙退火中的基本问题

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摘要

Millisecond-duration annealing at temperatures just below the melting point of silicon has been used to form very shallow junctions with a high degree of electrical activation. A prototype pulsed heating system based on a xenon flash-lamp was used to study the annealing of 250 eV B-implants in silicon. The sheet resistance and junction depth results meet the requirements of the 45 nm device node. Despite these encouraging results millisecond annealing faces many severe challenges before it can be implemented in volume manufacturing. The approach requires surface heating with high-energy-density pulses of radiation that generate very large temperature gradients in the wafer. These conditions can produce extreme temperature non-uniformity in patterned surfaces and very large thermal stresses. Similar problems exist for approaches based on scanned energy beams, with additional scan-dependent effects that arise from heat diffusion along lateral directions in the plane of the wafer.
机译：在刚好低于硅熔点的温度下进行的毫秒持续时间退火已被用来形成具有高度电激活程度的非常浅的结。基于氙闪光灯的脉冲加热原型系统用于研究硅中250 eV B注入的退火。薄层电阻和结深度结果满足45 nm器件节点的要求。尽管获得了这些令人鼓舞的结果，毫秒退火在批量生产中实现之前仍面临许多严峻挑战。该方法需要使用高能量密度的辐射脉冲对表面进行加热，从而在晶片中产生非常大的温度梯度。这些条件会在图案化的表面产生极端的温度不均匀性，并产生非常大的热应力。对于基于扫描的能量束的方法也存在类似的问题，其附加的与扫描相关的效应是由于热沿着晶片平面内的横向扩散而产生的。

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