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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >RADIATION-INDUCED DEEP LEVELS IN LEAD AND TIN DOPED N-TYPE CZOCHRALSKI SILICON
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RADIATION-INDUCED DEEP LEVELS IN LEAD AND TIN DOPED N-TYPE CZOCHRALSKI SILICON

机译：铅和锡掺杂的N型CCHOCHRALSKI硅中的辐射诱导的深层

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摘要

This paper describes a Deep Level Transient Spectroscopy (DLTS) study of the electron traps that are created by high-energy electron or proton irradiations in n-type Czochralski silicon, doped with different Group Ⅳ elements. It is shown that while Sn is an efficient vacancy trap, leading to the formation of SnV centers, no specific Pb-related deep levels have been found in the upper half of the band gap. The dominant electron trap is the A center, while similar concentrations of SnV's are formed in Sn- and Pb+Sn-doped n-Cz material. A number of as yet unidentified deep levels has also been observed, together with some grown-in peaks, whereof some could be hydrogen-related. From a viewpoint of radiation hardening, these initial results demonstrate that Pb is little effective in suppressing the formation of radiation defects.
机译：本文描述了深能级瞬态光谱法（DLTS）的研究，该技术研究了高能电子或质子辐照在掺杂有不同Ⅳ族元素的n型切克劳斯基硅中产生的电子陷阱。结果表明，尽管Sn是有效的空位陷阱，导致SnV中心的形成，但在带隙的上半部未发现与Pb有关的特定深能级。主要的电子陷阱是A中心，而在掺Sn和Pb + Sn的n-Cz材料中形成相似浓度的SnV。还观察到许多尚未确定的深能级，以及一些长大的峰，其中一些可能与氢有关。从辐射硬化的观点来看，这些初步结果表明，Pb在抑制辐射缺陷的形成方面几乎没有效果。

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