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EXPERIMENTAL STUDY AND SIMULATION OF STRESS-INDUCED CAVITIES IN SILICON

机译:硅中应力诱发空穴的实验研究与模拟

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摘要

The formation of cavities on the surface of silicon wafers under nitride films with high tensile stresses has been studied experimentally and by means of computer simulations. For the first time, the development of stress-induced trenches is reported. The simulations indicated that generation and recombination of point defects under stresses at the wafer surface might lead to the essential mass transfer of silicon from areas of high pressure. Stress-induced surface diffusion of silicon atoms was a dominating mechanism of the cavity growth. From the performed experimental calibration of the simulation model, the values of 10~(-3) cm~2/s and 0.9 eV were extracted for the pre-exponential and activation energy of the self-diffusion coefficient on the silicon surface.
机译:已经通过实验和计算机模拟研究了在具有高拉伸应力的氮化物膜下的硅晶片表面上形成空腔的过程。首次报道了应力诱导沟槽的发展。模拟表明,在晶片表面应力下点缺陷的产生和复合可能导致硅从高压区域的基本质量转移。应力诱导的硅原子表面扩散是空穴生长的主要机制。从仿真模型进行的实验校准中,提取出硅表面自扩散系数的指数前和活化能为10〜(-3)cm〜2 / s和0.9 eV的值。

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