THRESHOLDS FOR EFFECTIVE INTERNAL GETTERING IN SILICON WAFERS

机译：硅晶片有效内部吸气的阈值

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The gettering of transition metals by Internal Gettering (IG) is an important tool for the management of metal contamination in IC processing. But unlike most external gettering systems, IG systems must be "set up" in a silicon wafer via a controlled precipitation of dissolved interstitial oxygen in the wafer during heat treatments. This paper addresses the question of the threshold to effective IG as the oxygen in the system goes from an essentially fully dissolved state to varying degrees of precipitation. The central step in the transition to an efficient gettering system is a morphological transformation of a growing oxygen cluster from an unstrained state to a strained platelet. Experimental data of the transformation rates as a function of nuclei site density and oxygen concentration are given. The dependence of the transformation rate has been successfully modeled and the time to create efficient IG systems as a function of site density, temperature and oxygen concentration is calculated.

机译：通过内部吸气剂（IG）吸取过渡金属是管理IC处理中金属污染的重要工具。但是，与大多数外部吸气系统不同，在热处理过程中，必须通过控制溶解的间隙氧在晶片中的沉淀，在硅晶片中“设置” IG系统。本文讨论了当系统中的氧气从基本上完全溶解的状态变为不同程度的沉淀时，有效IG阈值的问题。向高效吸气系统过渡的核心步骤是将生长中的氧簇从未应变状态转变为应变血小板的形态学转变。给出了转化率随核位置密度和氧浓度变化的实验数据。已经成功地模拟了转化率的依赖性，并计算了根据位点密度，温度和氧气浓度来创建高效IG系统的时间。

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《Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US)》|2004年|P.188-201|共14页
会议地点 HonoluluHI(US)
作者
R.Falster; V.V.Voronkov; V. Y. Resnik; M.G. Milvidskii;
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MEMC Electronic Materials , viale Gherzi 31, 28100 Novara 1, Italy;

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原文格式 PDF
正文语种 eng
中图分类 TN304.12;
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1. Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer [J] . Jung Jung Gyu, Lee Kisang, Lee Boyoung, Solid-State Electronics . 2018,第OCTa期

机译：p型硅片在垂直方向上的铜内部吸杂特性
2. Enhanced internal gettering of iron in n~+ epitaxial silicon wafer: Effect of high temperature rapid thermal annealing in nitrogen ambient [J] . Peng Dong, Xingbo Liang, Daxi Tian, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：n / n〜+外延硅晶片中铁的增强的内部吸杂：氮环境中高温快速热退火的影响
3. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering [J] . Boulfrad Yacine, Haarahiltunen Antti, Savin Hele, Progress in photovoltaics . 2015,第1期

机译：通过内部吸气增强多晶硅晶片在劣化区域的性能
4. THRESHOLDS FOR EFFECTIVE INTERNAL GETTERING IN SILICON WAFERS [C] . R. Falster, V. V. Voronkov, V. Y. Resnik, International Symposium on High Purity Silicon . 2004

机译：硅晶片中有效内部吸收的阈值
5. Internal gettering of iron and nickel in silicon. [D] . Sinha, Pankaj Kumar. 1988

机译：硅中铁和镍的内部吸气剂。
6. Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [O] . Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, 2019

机译：CMOS图像传感器的暗电流光谱法对碳氢化合物分子离子注入的硅晶片进行吸杂设计
7. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering [O] . Boulfrad Yacine, Haarahiltunen Antti, Savin Hele, 2013

机译：通过内部吸气增强多晶硅晶片在劣化区域的性能
8. Competition between gettering by implantation-induced cavities in silicon and internal gettering associated with SiO{sub 2} precipitation [R] . 1996

机译：硅中注入诱导空穴吸杂与siO {sub 2}沉淀相关的内部吸杂之间的竞争

THRESHOLDS FOR EFFECTIVE INTERNAL GETTERING IN SILICON WAFERS

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