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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >IMPURITY LOCKING OF DISLOCATIONS IN SILICON
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IMPURITY LOCKING OF DISLOCATIONS IN SILICON

机译：硅错位锁定

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摘要

The behaviour of oxygen and nitrogen impurities in silicon has been investigated using a novel dislocation locking technique. The locking effect of oxygen in Czochralski silicon (Cz-Si) was investigated in the 350 to 850℃ temperature range and was found to display five well-defined regimes as a function of annealing time. Results indicate that enhanced transport of oxygen to dislocations takes place for temperatures below ～700℃. Numerical simulations of the enhanced oxygen transport indicate that the effective diffusivity becomes dependent on oxygen concentration with an activation energy of approximately 1.5 eV. The same technique has been used to investigate nitrogen transport in nitrogen doped float-zone silicon (NFZ-Si) in the 550 to 830℃ temperature range and shows nitrogen to have a comparable locking effect to oxygen in Cz-Si, despite being present in a concentration that is two orders of magnitude lower. The stress required to unlock dislocations at 550℃ which have previously been immobilised by nitrogen during an annealing step, initially increases approximately linearly with the duration of the anneal before saturating to a steady-state value of approximately 50MPa for all anneal temperatures investigated. An expression the transport of nitrogen to the dislocations was deduced, which has an activation energy of 1.45 eV.
机译：使用新型位错锁定技术已经研究了硅中氧和氮杂质的行为。在350至850℃的温度范围内，研究了氧在直拉硅（Cz-Si）中的锁定作用，发现该退火作用随退火时间的变化呈现出五个明确定义的状态。结果表明，温度低于〜700℃时，氧向位错的传输增强。增强的氧传输的数值模拟表明，有效扩散率取决于氧浓度，其活化能约为1.5 eV。相同的技术已被用于研究在550至830℃温度范围内的氮掺杂浮区硅（NFZ-Si）中的氮迁移，尽管存在于氮中，但氮在Cz-Si中具有与氧相当的锁定作用。浓度要低两个数量级。在所有研究退火温度下，退火之前在氮气中固定的550℃位错解锁所需的应力最初随退火持续时间线性增加，然后逐渐趋于饱和。推导了氮向位错的转运的表达式，其活化能为1.45 eV。

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