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ENHANCEMENT OF INTERNAL GETTERING EFFICIENCY OF IRON BY LOW TEMPERATURE NUCLEATION

机译:低温成核提高铁的内部吸气效率

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摘要

In order to better understand internal gettering of iron in silicon at low supersaturation, an experimental study of iron gettering with different annealing profiles was performed. Special attention was paid to the effect of iron nucleation at low temperatures. The results reveal that gettering can be efficient even after 30 minutes anneal at 700℃ if the wafers go through a low-temperature region before the actual gettering anneal. In the simplest case the low-temperature nucleation can be realized by a fast withdrawal of the wafers out of the furnace. The density of oxygen precipitates seemed to have only a minor impact on the gettering efficiency indicating that not every oxygen precipitate related gettering site is an active sink for iron.
机译:为了更好地了解低过饱和度下硅中铁的内部吸杂,进行了具有不同退火曲线的铁吸杂的​​实验研究。特别注意铁在低温下的成核作用。结果表明,如果晶片在实际的吸杂退火之前经过低温区域,则即使在700℃退火30分钟后,吸杂仍能有效进行。在最简单的情况下,可以通过将晶片快速从炉中取出来实现低温成核。氧沉淀物的密度似乎对吸杂效率仅有很小的影响,这表明并非每个与氧沉淀物有关的吸杂位都是铁的活性吸收剂。

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