IMPACT OF LANTHANIDE CONTAMINATION ON ULSI CMOS

机译：镧污染对ULSI CMOS的影响

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We have studied the impact of intentional contamination by various lanthanides (La, Lu, Pr, Gd) at doses of 3E11-1E14 cm~(-2), upon the electrical behavior of a 130nm technology transistors. Even at the lowest levels, contaminants spun on just prior to gate oxide growth show impact upon transistor behavior. The elements impact the device primarily by acting as fixed charge in the dielectric, but also by allowing gate and diode leakage.

机译：我们研究了在3E11-1E14 cm〜（-2）剂量下各种镧系元素（La，Lu，Pr，Gd）的故意污染对130nm技术晶体管电学行为的影响。即使在最低水平下，在栅极氧化物生长之前溅出的污染物也会对晶体管的行为产生影响。这些元素主要通过充当电介质中的固定电荷来影响设备，而且还会导致栅极和二极管泄漏。

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《Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US)》|2004年|P.297-306|共10页
会议地点 HonoluluHI(US)
作者
W.J. Taylor; L. Lovejoy; P.J. Tobin; Z.X. Jiang; J. Lerma; J.-Y. Nguyen; R. Garcia;
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Freescale Semiconductor, Advanced Products RD Laboratory MailDrop: K-10, 3501 Ed Bluestein Blvd, Austin;

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原文格式 PDF
正文语种 eng
中图分类 TN304.12;
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IMPACT OF LANTHANIDE CONTAMINATION ON ULSI CMOS

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