FTIR MEASUREMENT OF NITROGEN IN SILICON USING SHUTTLE TYPE SAMPLE STAGE

机译：穿梭式样品台红外光谱法测定硅中氮

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FTIR is improved for the measurement of practical nitrogen doping level, from mid 10~(13) cm~(-3) to low 10~(14) cm~(-3), using 2mm samples. New shuttle type sample stage can eliminate any time dependent FTIR instability by virtual simultaneous measurement of sample and blank. Baseline comes very straight. As results, baseline instability due to sample itself comes an important issue to detect small nitrogen related LVM peaks. There is some wave number region where baseline is insensitive to sample properties. NN LVM at 766 cm~(-1) is well defined and can be detected down to high 10~(13) cm~(-3) level nitrogen concentration.

机译：FTIR使用2mm样品从10〜（13）cm〜（-3）到低10〜（14）cm〜（-3）进行了改进，以测量实际的氮掺杂水平。新型的往复式样品台可以通过虚拟同时测量样品和空白样品来消除任何随时间变化的FTIR不稳定性。基线很直。结果，由于样品本身引起的基线不稳定性成为检测与氮相关的较小LVM峰的重要问题。在某些波数区域，基线对样本属性不敏感。 766 cm〜（-1）的NN LVM定义明确，可以检测到低至10〜（13）cm〜（-3）的高氮浓度。

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来源
《Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US)》|2004年|P.121-131|共11页
会议地点 HonoluluHI(US)
作者
Masaharu Watanabe; Noriaki Takenawa;
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作者单位

Accent Optical Technologies Co., Ltd. 7-6 Higashi-Ueno 2-chome, Taito-ku, Tokyo, 110-0015 Japan;

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原文格式 PDF
正文语种 eng
中图分类 TN304.12;
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FTIR MEASUREMENT OF NITROGEN IN SILICON USING SHUTTLE TYPE SAMPLE STAGE

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