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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >LONG-TIME RELAXATION OF SILICON RESISTIVITY AFTER ANNIHILATION OF THERMAL DONORS
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LONG-TIME RELAXATION OF SILICON RESISTIVITY AFTER ANNIHILATION OF THERMAL DONORS

机译：热供体消失后硅电阻率的长时间松弛

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摘要

Annealing of silicon samples at 650 or 900℃ (intended to annihilate grown-in thermal donors) was found to partially deactivate boron acceptors. The degree of deactivation normally ranges from around 10% up to 50%. Following the anneal, the acceptors gradually reactivate at room temperature and there is a corresponding decrease in the resistivity, that takes several days. The relaxation amplitude is proportional to the boron concentration for both types of anneals. But the oxygen concentration dependence was found to be qualitatively different for the 650 and 900℃ anneals, with an increasing and a decreasing dependence respectively. The proposed de-activation mechanism, for 650℃ anneal, is by mobile oxygen clusters. For 900℃ annealing, the deactivating agent can be some fast-diffusing impurity.
机译：发现硅样品在650或900℃退火（旨在消灭生长的热供体）会部分钝化硼受体。失活程度通常在10％到50％之间。退火后，受主在室温下逐渐重新活化，并且电阻率相应降低，这需要几天的时间。对于两种退火类型，弛豫幅度均与硼浓度成正比。但是，发现氧浓度依赖性在650和900℃退火中在质量上有所不同，依赖性分别增大和减小。提出的用于650℃退火的失活机理是通过可移动的氧簇。对于900℃退火，钝化剂可能是一些快速扩散的杂质。

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