MORPHOLOGY AND STRESS INVESTIGATIONS OF SURFACE AND SUBSURFACE REGIONS OF PLASMA HYDROGENATED AND ANNEALED CZOCHRALSKI SILICON

机译：等离子体加氢和退火后的直晶硅的表面和亚表面区域的形貌和应力研究

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Hydrogen plasma treatments were applied on Czochralski (Cz) silicon wafers at ～ 260 - 270 ℃ in a PECVD-setup. Those plasma treatments cause a structuring of the wafer surface regions down to the sub-100 nm scale. The thickness of the structured layers is in the order of 100 - 200 nm. The impact of the applied plasma, the doping of the substrates, and of the post-hydrogenation annealing on the morphology of the structured surface layers was studied. Annealing was applied up to 1200 ℃ in vacuum. Investigations were done by scanning electron microscopy (SEM), μ-Raman spectroscopy (μRS), and atomic force microscopy (AFM). The structuring can be explained by a redeposition mechanism. During annealing at T ≥ 800 ℃ the structured surface layers are dissolved, and Si atoms formerly located in the redeposited crystallites are rebuilt onto the wafer surface. The reconstructed wafer surface and subsurface layers exhibit strong tensile stress up to quite deep wafer regions (～ 10 μm), as was observed by depth resolved μ-Raman analysis.

机译：在PECVD装置中，在260-270℃左右的温度下，在Czochralski（Cz）硅晶片上进行了氢等离子体处理。那些等离子体处理导致晶片表面区域的结构化，直至亚100纳米以下。结构化层的厚度约为100-200nm。研究了施加的等离子体，衬底的掺杂以及加氢后退火对结构化表面层形态的影响。在真空中进行退火至1200℃。通过扫描电子显微镜（SEM），μ拉曼光谱（μRS）和原子力显微镜（AFM）进行了研究。可以通过重新沉积机制来解释结构。在T≥800℃的退火过程中，结构化的表面层被溶解，原来位于再沉积的微晶中的Si原子被重建在晶片表面上。深度分辨μ拉曼分析观察到，重建的晶片表面和亚表面层在很深的晶片区域（约10μm）内均表现出较强的拉伸应力。

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《Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US)》|2004年|P.407-418|共12页
会议地点 HonoluluHI(US)
作者
R. Job; Y. Ma; Y.L. Huang; W. Duengen;
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University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany;

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原文格式 PDF
正文语种 eng
中图分类 TN304.12;
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1. Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers [J] . R. Job, Y. Ma, Y.-L. Huang, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：等离子体氢化切克劳斯基硅片的显微拉曼研究深度分辨缺陷分析
2. Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition [J] . Yan X, FengF, Zhang J, Plasma Science & Technology . 2009,第5期

机译：等离子增强化学气相沉积制备的氢化非晶硅膜的表面形态
3. Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition [J] . YAN Xu, FENG Fei, ZHANG Jin, 等离子体科学和技术（英文版） . 2009,第005期

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4. MORPHOLOGY AND STRESS INVESTIGATIONS OF SURFACE AND SUBSURFACE REGIONS OF PLASMA HYDROGENATED AND ANNEALED CZOCHRALSKI SILICON [C] . R. Job, Y. Ma, Y. L. Huang, International Symposium on High Purity Silicon . 2004

机译：血浆氢化和退火的表面和地下区域的形态和应力研究Czochralski硅
5. AUGER ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIC INVESTIGATION OF ENCAPSULATED ANNEALING OF III-V COMPOUND SEMICONDUCTORS (PLASMA DEPOSITION, SILICON-NITRIDE, ION IMPLANTATION). [D] . VALCO, GEORGE JOHN. 1986

机译：对III-V族化合物半导体的等离子退火（等离子沉积，硅氮化物，离子注入）进行俄歇电子和X射线光电子能谱研究。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

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7. Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si [O] . Di Z, Wang Y, Nastasi M, 2007

机译：等离子体氢化硅中应力诱导的（100）血小板形成和表面剥落的研究
8. Simulation of the Bulk and Surface Properties of Amorphous Hydrogenated Silicon Deposited from Silane Plasmas [R] . Kushner, M. J. 1989

机译：硅烷等离子体沉积非晶氢化硅的体积和表面性质模拟

MORPHOLOGY AND STRESS INVESTIGATIONS OF SURFACE AND SUBSURFACE REGIONS OF PLASMA HYDROGENATED AND ANNEALED CZOCHRALSKI SILICON

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