Dielectric Spectroscopy on Ga Nanoparticles in Glassy Matrix: Negative Capacitance Effect

机译：玻璃基质中的Ga纳米粒子的介电谱：负电容效应

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By means of a dielectric spectroscopy investigation a negative capacitance effect (NC) in the low-frequency range (4-8 x 10~5 Hz) is evidenced in a nanometric system of metallic Ga nanoparticles embedded in dielectric SiO_x (x ～1) matrix, both at 20 K and RT. The clear dependence of the effect on the relatively large values of the inertial transient current is shown. The crucial role of the SiO_x/Ga nanoparticles interfaces is revealed through the comparison between two samples with different Ga nanoparticles size. The microscopic physical mechanism originating the time-dependence of the transient current is show to be due to space charges at the SiO_x/Ga nanoparticles interfaces. A relation between the structural peculiarity of the investigated nanometric system and the manifestation of the NC phenomenon is considered.

机译：通过介电谱研究，在嵌入在电介质SiO_x（x〜1）基质中的金属Ga纳米颗粒的纳米系统中，证实了低频范围（4-8 x 10〜5 Hz）的负电容效应（NC）。，无论是在20 K和RT下。示出了效果对惯性瞬态电流的相对较大值的明显依赖性。 SiO_x / Ga纳米颗粒界面的关键作用是通过比较具有不同Ga纳米颗粒尺寸的两个样品而揭示的。瞬态电流随时间变化的微观物理机制被证明是由于SiO_x / Ga纳米粒子界面处的空间电荷引起的。考虑所研究的纳米系统的结构特性与NC现象的表现之间的关系。

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《Proceedings vol.2004-13; International Symposium on Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications; ;》||P.313-323|共11页
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G.B. Parravicini; A. Stella; M.C. Ungureanu; R. Kofman;
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Dipartimento di Fisica 'A. Volta', Universita di Pavia, I-27100 Pavia, Italy;

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中图分类材料;
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Dielectric Spectroscopy on Ga Nanoparticles in Glassy Matrix: Negative Capacitance Effect

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