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首页> 外文会议>Proceedings vol.2004-13; International Symposium on Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications; ; >The Optimization of the Soft Bake Step for the Low-k Application using Novel Porous Ladder-type HSQ
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The Optimization of the Soft Bake Step for the Low-k Application using Novel Porous Ladder-type HSQ

机译：新型多孔梯型HSQ在Low-k应用中软烘烤步骤的优化

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摘要

As we introduced the porogen into the ladder-type HSQ with dielectric constant about 3.0, we made the porous ladder-type HSQ with lower dielectric constant about 2.5 for low-k application. We optimized the soft bake condition for solving the problem that the remained porogen after soft bake causes to water absorption in low-k film and deteriorates the film stability such as the film thickness and refractive index. As the soft bake step was over 250℃, the porogen remained in film was reduced dramatically and water absorption according to expose time was also disappeared. The film thickness and refractive index was very stable at 80/150/300℃ condition and mechanical properties of PL-HSQ film such as hardness and elastic modulus also showed the best condition at 80/150/300℃ condition.
机译：当我们将成孔剂引入介电常数约为3.0的阶梯型HSQ时，我们制成了介电常数较低的多孔梯形HSQ约为2.5，用于低k应用。我们优化了软烘烤条件，以解决软烘烤后残留的致孔剂导致低k膜吸收水并降低膜稳定性（如膜厚和折射率）的问题。当软烘烤步骤超过250℃时，薄膜中残留的成孔剂显着减少，并且根据曝光时间的吸水率也消失了。在80/150/300℃条件下，膜厚和折射率非常稳定，在80/150/300℃条件下，PL-HSQ膜的机械性能如硬度和弹性模量也表现出最佳状态。

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