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首页> 外文会议>Proceedings vol.2004-17; Electrochemical Society(ECS) Meeting and Symposium on Electrochemical Process in ULSI and MEMS; 2004 Spring; San Antonio,TX(US) >INFLUENCE OF LEVELING AGENTS ON SURFACE ROUGHNESS OF ELECTRODEPOSITED COPPER FILMS
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INFLUENCE OF LEVELING AGENTS ON SURFACE ROUGHNESS OF ELECTRODEPOSITED COPPER FILMS

机译：平整剂对电沉积铜膜表面粗糙度的影响

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摘要

Total integrated scattering (TIS) along with SIMS impurity concentration measurements were utilized to study the surface morphology and impurity concentration in deposited films as a function of bath composition, current density, wafer rotational speed, and electrodeposition time. In particular, the effect of organic additives, accelerator, suppressor, and leveler was investigated. The use of levelers leads to a reduction in surface roughness. Correlation between roughness evolution and impurity concentration are made. The emphasis is placed on the sulfur incorporation into the deposited copper film as this is thought to reflect accelerator consumption during deposition. In agreement with recent literature, when no leveler is present in the bath, sulfur inclusion is found to be dependent strongly on deposition currents but independent of agitation. With leveler, both, roughness and sulfur inclusion become agitation leveler concentration dependent. Results indicate that the present leveling mechanism leads to roughness reduction at the expense of higher accelerator consumption.
机译：利用总积分散射（TIS）和SIMS杂质浓度测量结果来研究沉积膜的表面形态和杂质浓度与镀液成分，电流密度，晶圆旋转速度和电沉积时间的关系。特别地，研究了有机添加剂，促进剂，抑制剂和整平剂的作用。使用矫直机可降低表面粗糙度。建立了粗糙度演变与杂质浓度之间的关系。重点放在硫结合到沉积的铜膜中，因为认为这反映了沉积过程中促进剂的消耗。与最近的文献一致，当浴中不存在整平剂时，发现硫的夹杂物强烈地依赖于沉积电流，但是与搅拌无关。使用整平剂时，粗糙度和硫含量都取决于搅拌整平剂的浓度。结果表明，当前的找平机制导致粗糙度降低，但消耗了更高的加速剂。

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