SIMPLE METHOD TO DETERMINE THE POLY GATE DOPING CONCENTRATION BASED ON POLY DEPLETION EFFECT

机译：基于多耗竭效应确定多晶掺杂浓度的简单方法

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This work presents an analysis of the Capacitance vs. Voltage curve in MOS Capacitor taking into account the poly gate depletion effect in deep submicrometer CMOS technology. This effect is observed in capacitors with poly gate material with low doping concentration near of poly gate/oxide interface. By bidimensional numerical simulations, C-V curves were performed for this analysis and a simple method to determine the poly gate doping concentration is proposed. Experimental results are also presented obtaining coherent values.

机译：这项工作考虑了深亚微米CMOS技术中的多晶硅栅极耗尽效应，对MOS电容器的电容与电压曲线进行了分析。在具有接近多晶硅栅极/氧化物界面的低掺杂浓度的多晶硅栅极材料的电容器中观察到了这种效应。通过二维数值模拟，进行了C-V曲线分析，并提出了一种确定多晶硅栅掺杂浓度的简单方法。还提出了获得相干值的实验结果。

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来源
《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.180-187|共8页
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作者
Michele Rodrigues; Victor Sonnenberg; Joao Antonio Martino;
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作者单位

Laboratorio de Sistemas Integraveis da Universidade de S3o Paulo Av. Prof. Luciano Gualberto, 158 trav. 3 -CEP 05508-900 Sao Paulo - Brazil;

Faculdade de Tecnologia - FATEC/SP/CEETEPS - Brazil;

Centro Universitario da FEI - Sao Bernardo do Campo - Brazil;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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SIMPLE METHOD TO DETERMINE THE POLY GATE DOPING CONCENTRATION BASED ON POLY DEPLETION EFFECT

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