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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >SILICON OXIDE SACRIFICIAL LAYER FOR MEMS APPLICATIONS
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SILICON OXIDE SACRIFICIAL LAYER FOR MEMS APPLICATIONS

机译：MEMS应用的氧化硅牺牲层

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摘要

Silicon oxide (SiO_2) insulators have been deposited by electron cyclotron resonance (ECR) plasma on Si substrate at room temperature (20℃). Optical emission spectrometry (OES) was used for plasma characterization, and intense formation of OH molecules in the gas phase was detected. Chemical bonds of the SiO_2 films were evaluated using Fourier Transform Infra- Red spectrometry (FTIR), which revealed the presence of Si-O, Si-Si and O-H bonds. The refractive indexes between 1.45 and 1.64 and the thickness between 326 nm and 506 nm were measured by ellipsometry. With these values, the deposition rates of 16 to 25 nm/min and the BHF etch rates higher than 1 μm/min were determined. The silicon oxide, which presented low resistance to BHF etching, were used as sacrificial layers for micro-electro-mechanical systems (MEMS) applications. Scanning Electron Microscopy (SEM) inspection was used to investigate the suspended structures, which were formed using these oxides. The results indicated that formed SiO_2 films are suitable sacrificial layers for MEMS.
机译：在室温（20℃）下通过电子回旋共振（ECR）等离子体在硅衬底上沉积了氧化硅（SiO_2）绝缘体。使用光发射光谱法（OES）进行等离子体表征，并检测到气相中大量形成OH分子。使用傅立叶变换红外光谱（FTIR）对SiO_2膜的化学键进行了评估，结果表明存在Si-O，Si-Si和O-H键。通过椭圆偏振法测量1.45至1.64之间的折射率以及326nm至506nm之间的厚度。利用这些值，确定了16至25nm / min的沉积速率和高于1μm/ min的BHF蚀刻速率。对BHF蚀刻表现出低抵抗力的氧化硅被用作微机电系统（MEMS）应用的牺牲层。扫描电子显微镜（SEM）检查用于研究使用这些氧化物形成的悬浮结构。结果表明，所形成的SiO_2膜是适合MEMS的牺牲层。

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