METAL SCREENING FOR CMOS APPLICATION THROUGH AB-INITIO INTERFACE WORK FUNCTION CALCULATIONS

机译：通过AB-INITIO接口工作功能计算对CMOS应用进行金属筛选

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

To continue the reduction of transistor dimensions in line with the historical trend the current SiO_2/polysilicon technology must be replaced by the high permissivity dielectric (high-K)/metal combination. Here we present ab-initio simulation studies performed for a variety of high-K/metal systems, which address a number of issues including the impact of interfacial oxygen in ZrO_2/Mo, the stability of the LaAlO_3/Si interfaces, and the valence band offsets of HfO_2/TiN and SiO2/TiN systems. Successful model HfO_2/Si and Al_2O_3/Si interfaces that correctly reproduce experimental data with polysilicon as the gate metal are discussed. These studies show that while vacuum work function calculations can be quite accurate, hence useful as a predictive tool, metal/dielectric interface calculations are severely limited in accuracy by the lack of experimental information on the atomistic structure of the interfaces and possibly by a limitation of density functional theory within the local density approximation.

机译：为了继续按照历史趋势减小晶体管尺寸，当前的SiO_2 /多晶硅技术必须由高介电常数的电介质（高K）/金属组合所代替。在这里，我们介绍了对各种高K /金属系统进行的从头开始的模拟研究，这些研究解决了许多问题，包括ZrO_2 / Mo中界面氧的影响，LaAlO_3 / Si界面的稳定性以及价带HfO_2 / TiN和SiO2 / TiN系统的偏移。讨论了成功模型HfO_2 / Si和Al_2O_3 / Si界面，该界面正确地再现了以多晶硅为栅金属的实验数据。这些研究表明，尽管真空功函数的计算可能非常准确，因此可用作预测工具，但由于缺乏关于界面原子结构的实验信息，并且可能由于界面的局限性，金属/电介质界面计算的准确性受到严重限制。密度泛函理论内的局部密度近似。

著录项

来源
《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.165-179|共15页
会议地点
作者
A. A. Knizhnik; I. M. Iskandarova; A. A. Bagaturyants; B. V. Potapkin; L. R. C. Fonseca; A. Korkin;
展开▼
作者单位

Kinetic Technologies Ltd, Kurchatov Sq. 1, Moscow, 123182, Russia;

RRC "Kurchatov Institute", HEPTI, Kurchatov Sq. 1, Moscow, Russia;

Photochemistry Center, Russian Academy of Sciences, ul. Novatorov 7a, 117421, Moscow, Russi;

Freescale Semiconductores Bras;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Variable Interface Dipoles of Metallated Porphyrin Self-Assembled Monolayers for Metal-Gate Work Function Tuning in Advanced CMOS Technologies [J] . Nanotechnology, IEEE Transactions on . 2010,第3期

机译：金属卟啉自组装单层的可变界面偶极子，用于先进CMOS技术中的金属门功函数调节
2. Three-Layer Laminated Metal Gate Electrodes With Tunable Work Functions for CMOS Applications [J] . W. P. Bai, S. H. Bae, H. C. Wen, IEEE Electron Device Letters . 2005,第4期

机译：具有可调整功函数的CMOS应用的三层层压金属栅电极
3. Work function control at metal-oxide interfaces in CMOS [J] . Tse K, Robertson J Materials science in semiconductor processing . 2006,第6期

机译：CMOS中金属氧化物界面的功函数控制
4. METAL SCREENING FOR CMOS APPLICATION THROUGH AB-INITIO INTERFACE WORK FUNCTION CALCULATIONS [C] . A. A. Knizhnik, I. M. Iskandarova, A. A. Bagaturyants, International Symposium on Microelectronics Technology and Devices . 2005

机译：通过AB-Initio接口工作功能计算的CMOS应用程序的金属筛选
5. An investigation of the work function of metal gate electrodes for advanced CMOS applications. [D] . Wong, Gloria Man Ting. 2008

机译：研究用于高级CMOS应用的金属栅电极的功函数。
6. Metrics for Evaluation and Screening of Metal–OrganicFrameworks for Applications in Mixture Separations [O] . Rajamani Krishna 2020

机译：金属有机物的评估和筛选指标混合物分离中的应用框架
7. Variable Interface Dipoles of Metallated Porphyrin Self-Assembled Monolayers for Metal-Gate Work Function Tuning in Advanced CMOS Technologies [O] . KHADERBAD MA, ROY U, YEDUKONDALU M, 2010

机译：金属卟啉自组装单层的可变界面偶极子，用于先进CMOS技术中的金属门功函数调节

METAL SCREENING FOR CMOS APPLICATION THROUGH AB-INITIO INTERFACE WORK FUNCTION CALCULATIONS

摘要

著录项

相似文献

相关主题

期刊订阅