ABOUT THE CONCEPT OF THRESHOLD IN MOS TRANSISTORS

机译：关于MOS晶体管中阈值的概念

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This paper presents a brief discussion on the main MOSFET threshold voltage definitions available in the literature as well as on associated extraction methodologies. In order to compare these definitions and methodologies, we take advantage of the Advanced Compact MOSFET (ACM) model, which accurately relates surface potential to inversion charge density in all regions of operation.

机译：本文对文献中提供的主要MOSFET阈值电压定义以及相关的提取方法进行了简要讨论。为了比较这些定义和方法，我们利用了高级紧凑型MOSFET（ACM）模型，该模型将所有操作区域中的表面电势与反型电荷密度精确关联。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.447-454|共8页
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M. C. Schneider; C. Galup-Montoro; M. B. Machado; A. I. A. Cunha;
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Department of Electrical Engineering, Federal University of Santa Catarina, Florianopolis, SC, CEP 88040-900, Brazil;

Department of Electrical Engineering, Federal University of Bahia Escola Politecnica, Salvador, BA, CEP 40210-630, Brazil;

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正文语种 eng
中图分类微电子学、集成电路（IC）;
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ABOUT THE CONCEPT OF THRESHOLD IN MOS TRANSISTORS

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